IP Library Assignment 052786/0725
Patent Assignment
Reel/Frame 052786/0725

Assignment of Assignor's Interest

Recorded: 2020-05-29 Pages: 7
Assignors
CHEN, HSIA-WEI
Executed: 2019-02-19
CHU, WEN-TING
Executed: 2019-02-19
LIAO, YU-WEN
Executed: 2019-02-19
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
NO. 8, LI-HSIN RD. 6, HSIN-CHU SCIENCE PARK, HSIN-CHU, 300-77, TAIWAN
Covered Property (1)
Method to Form Memory Cells Separated by a Void-Free Dielectric Structure
Application: 16/887,232 →
Publication: US 2020/0295085