Patent Assignment
Reel/Frame 055017/0657
Assignment of Assignor's Interest
Recorded: 2021-01-25
Pages: 4
Assignor
CROSSBAR, INC.
Executed: 2021-01-12
Assignee
INNOSTAR SEMICONDUCTOR (SHANGHAI) CO., LTD.
BUILDING C, 888 HUAN HU 2ND ROAD, LINGANG SPECIAL DISTRICT,, PUDONG NEW DISTRICT, SHANGHAI, CHINA
Covered Properties
(5)
Interconnects for Stacked Non-Volatile Memory Device and Method
Resistive Random Access Memory with Non-Linear Current-Voltage Relationship
Rram with Dual Mode Operation
Method for Surface Roughness Reduction After Silicon Germanium Thin Film Deposition
Patent:
9,425,046 →
Application:
14/335,542 →
Method for Silver Deposition for a Non-Volatile Memory Device
Patent:
9,401,475 →
Application:
14/546,926 →
Related Assignments
(5)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Nov 5, 2010
From: HERNER, SCOTT BRAD
To: CROSSBAR, INC.
Reel/Frame 025328/0137 →
Assignment of Assignor's Interest
Aug 16, 2013
From: JO, SUNG HYUN
To: CROSSBAR, INC.
Reel/Frame 031028/0392 →
Assignment of Assignor's Interest
Jul 2, 2015
From: YUE GEE, HARRY; MAXWELL, STEVEN PATRICK; VASQUEZ, NATIVIDAD, JR; NARAYANAN, SUNDAR
To: CROSSBAR, INC.
Reel/Frame 035968/0927 →
Assignment of Assignor's Interest
Jul 6, 2015
From: JO, SUNG HYUN; KIM, KUK-HWAN
To: CROSSBAR, INC.
Reel/Frame 035982/0748 →
Assignment of Assignor's Interest
Dec 7, 2015
From: MAXWELL, STEVEN PATRICK; JO, SUNG HYUN; HERNER, SCOTT BRAD
To: CROSSBAR, INC.
Reel/Frame 037225/0550 →