IP Library Assignment 056564/0183
Patent Assignment
Reel/Frame 056564/0183

Assignment of Assignor's Interest

Recorded: 2021-06-16 Pages: 4
Assignors
WEI, YI YANG
Executed: 2020-11-30
LEE, BI-SHEN
Executed: 2020-11-30
LAI, HSIN-YU
Executed: 2020-11-30
TRINH, HAI-DANG
Executed: 2020-11-30
LIN, HSING-LIEN
Executed: 2020-11-30
KUANG, HSUN-CHUNG
Executed: 2020-11-30
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property (1)
Multi-Layer Electrode to Improve Performance of Ferroelectric Memory Device
Application: 17/349,273 →
Publication: US 2022/0406916