Patent Assignment
Reel/Frame 056756/0322
Assignment of Assignor's Interest
Recorded: 2021-07-06
Pages: 3
Assignors
HUANG, RAINER, YEN-CHIEH
Executed: 2021-06-02
CHEN, HAI-CHING
Executed: 2021-06-02
LIN, YU-MING
Executed: 2021-06-02
LIN, CHUNG-TE
Executed: 2021-06-02
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
NO.8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK,, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Ferroelectric Memory Device, Manufacturing Method of the Ferroelectric Memory Device and Semiconductor Chip