Patent Assignment
Reel/Frame 056857/0407
Assignment of Assignor's Interest
Recorded: 2021-07-14
Pages: 8
Assignors
YIN, HUAXIANG
Executed: 2021-07-09
HOU, ZHAOZHAO
Executed: 2021-07-09
YE, TIANCHUN
Executed: 2021-07-09
LI, CHAOLEI
Executed: 2021-07-09
Assignee
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
NO. 3 BEITUCHENG WEST ROAD, CHAOYANG DISTRICT, BEIJING, 100029, CHINA
Covered Property
(1)
Three-Dimensional Vertical Single Transistor Ferroelectric Memory and Manufacturing Method Thereof