Patent Assignment
Reel/Frame 058161/0752
Assignment of Assignor's Interest
Recorded: 2021-11-19
Pages: 4
Assignee
CHANGXIN MEMORY TECHNOLOGIES, INC.
NO. 388, XINGYE AVENUE, AIRPORT INDUSTRIAL PARK, ECONOMIC AND TECHNOLOGICAL DEVELOPMENT AREA, HEFEI CITY, ANHUI, 230000, CHINA
Covered Property
(1)
Semiconductor Structure Including a Trench Having a High Aspect Ratio Formed by Etching and Its Manufacturing Method as Applied to Formation of a Capacitor in the Semiconductor Structure