Patent Assignment
Reel/Frame 058654/0418
Assignment of Assignor's Interest
Recorded: 2022-01-14
Pages: 5
Assignee
CHANGXIN MEMORY TECHNOLOGIES, INC.
NO. 388, XINGYE AVENUE, AIRPORT INDUSTRIAL PARK, ECONOMIC AND TECHNOLOGICAL DEVELOPMENT AREA, HEFEI, ANHUI, 230601, CHINA
Covered Property
(1)
Method for Forming Semiconductor Structure by Using Sacrificial Layer Configured to Be Replaced Subsequently to Form Bit Line, Semiconductor Structure, and Memory