Patent Assignment
Reel/Frame 058914/0498
Assignment of Assignor's Interest
Recorded: 2022-02-07
Pages: 4
Assignors
KAO, HSIANG-LUN
Executed: 2022-01-16
HUANG, CHEN-CHIU
Executed: 2022-01-12
HUANG, CHIEN-HUA
Executed: 2022-01-12
LIN, CHUNG-TE
Executed: 2022-01-12
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Magnetoresistive Random-Access Memory (MRAM) Structure For Improving Process Control And Method Of Fabricating Thereof