Assignment of Assignor's Interest

Recorded: 2022-03-24 Pages: 5

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Assignor

HEADWAY TECHNOLOGIES, INC.

Executed: 2021-08-09

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

NO. 8, LI-HSIN ROAD 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN

Covered Properties (3)

Combined Physical and Chemical Etch to Reduce Magnetic Tunnel Junction (Mtj) Sidewall Damage

PCT: PCT/US2018/032196 ↗

Free Layer Sidewall Oxidation and Spacer Assisted Magnetic Tunnel Junction (MTJ) Etch for High Performance Magnetoresitive Random Access Memory (MRAM) Devices

Patent: 10,134,981 →

Application: 15/789,150 →

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (Spin Torque Transfer-Magnetic Random Access Memory) Devices

Patent: 10,784,310 →

Application: 16/184,518 →

Publication: US 2020/0152698

Related Assignments (2)

Other recorded transfers of the patents in this record — the chain of ownership.

Assignment of Assignor's Interest Nov 15, 2017

From: YANG, YI; SHEN, DONGNA; WANG, YU-JEN

To: HEADWAY TECHNOLOGIES, INC.

Reel/Frame 044129/0933 →

Assignment of Assignor's Interest Dec 19, 2018

From: LIU, HUANLONG; JAN, GUENOLE; TONG, RU-YING; ZHU, JIAN

To: HEADWAY TECHNOLOGIES, INC.

Reel/Frame 047813/0782 →