Patent Assignment
Reel/Frame 059629/0125
Assignment of Assignor's Interest
Recorded: 2022-04-19
Pages: 5
Assignee
CHANGXIN MEMORY TECHNOLOGIES, INC.
NO. 388, XINGYE AVENUE, AIRPORT INDUSTRIAL PARK, ECONOMIC AND TECHNOLOGICAL DEVELOPMENT AREA, HEFEI, ANHUI, 230000, CHINA
Covered Property
(1)
Semiconductor Structure with a First Lower Electrode Layer and a Second Lower Electrode Layer and Method for Manufacturing Same