Patent Assignment
Reel/Frame 059868/0843
Assignment of Assignor's Interest
Recorded: 2022-05-09
Pages: 3
Assignor
ZHANG, KUI
Executed: 2022-04-27
Assignee
CHANGXIN MEMORY TECHNOLOGIES, INC.
NO. 388, XINGYE AVENUE, AIRPORT INDUSTRIAL PARK, ECONOMIC AND TECHNOLOGICAL DEVELOPMENT AREA, HEFEI CITY, ANHUI, 230601, CHINA
Covered Property
(1)
Method of Manufacturing a Semiconductor Structure Comprising Forming an Insulating Material Layer with Gaps Therein in Isolation Region and Manufactured Semiconductor Structure