Patent Assignment
Reel/Frame 060101/0770
Assignment of Assignor's Interest
Recorded: 2022-06-03
Pages: 3
Assignors
LAI, TE-YANG
Executed: 2022-06-01
CHEN, HSUEH-JU
Executed: 2022-06-02
LIN, TSUNG-DA
Executed: 2022-06-01
CHUI, CHI ON
Executed: 2022-06-01
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Semiconductor Device Having Doped Gate Dielectric Layer and Method for Forming the Same