Patent Assignment
Reel/Frame 060501/0301
Assignment of Assignor's Interest
Recorded: 2022-07-14
Pages: 5
Assignors
HUANG, RAINER YEN-CHIEH
Executed: 2022-03-28
TSAI, HAN-TING
Executed: 2022-03-29
LIN, TSANN
Executed: 2022-07-09
CHIANG, KUO-CHANG
Executed: 2022-03-28
DAI, MIN-KUN
Executed: 2022-03-28
LIN, CHUNG-TE
Executed: 2022-03-28
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
NO.8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK,, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Method of Forming Ferroelectric Memory Device