Patent Assignment
Reel/Frame 060713/0864
Assignment of Assignor's Interest
Recorded: 2022-08-03
Pages: 12
Assignors
LIAO, CHIH-CHERNG
Executed: 2022-07-28
LAO, CHUNG-REN
Executed: 2022-07-28
LIU, HSING-CHAO
Executed: 2022-07-28
LI, CHUN-WEI
Executed: 2022-07-28
LIAO, HSUEH-CHUN
Executed: 2022-07-29
Assignee
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
123, PARK AVE-3RD, HSINCHU SCIENCE PARK, HSINCHU, TAIWAN
Covered Property
(1)
Semiconductor Device with a Deep Trench Isolation Structure and Buried Layers for Reducing Substrate Leakage Current and Avoiding Latch-Up Effect, and Fabrication Method Thereof