Assignment of Assignor's Interest

Recorded: 2022-10-12 Pages: 4

Assignors

KONISHI, KUMIKO

Executed: 2022-09-02

OKINO, HIROYUKI

Executed: 2022-09-01

HIROOKA, TAISUKE

Executed: 2022-09-07

Assignee

HITACHI METALS, LTD.

6-36, TOYOSU 5-CHOME, KOTO-KU, TOKYO, 135-0061, JAPAN

Covered Property (1)

Silicon Carbide Substrate Including Multiple Semiconductor Layers Having a High Break Down Voltage

Application: 17/942,308 →

Publication: US 2023/0084128

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.