Patent Assignment
Reel/Frame 062273/0649
Assignment of Assignor's Interest
Recorded: 2023-01-04
Pages: 4
Assignors
LIN, TA-CHUN
Executed: 2022-12-26
CHEN, YI-HSIEN
Executed: 2022-12-26
HUANG, CHI
Executed: 2022-12-27
TSAO, CHIH-PIN
Executed: 2022-12-26
LIANG, CHUN-SHENG
Executed: 2022-12-26
CHANG, CHIH-HAO
Executed: 2023-01-02
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Method of Forming Semiconductor Device with Silicide Layer with Different Silicide Phases or Different Thicknesses
Application:
18/149,571 →
Publication:
US 2024/0222431