Patent Assignment
Reel/Frame 063931/0548
Assignment of Assignor's Interest
Recorded: 2023-06-13
Pages: 5
Assignors
ZHANG, QUAN
Executed: 2023-05-24
YAO, LAN
Executed: 2023-05-24
XIE, BORU
Executed: 2023-05-24
YAN, JIE
Executed: 2023-05-24
Assignee
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
NO.88 WEILAI 3RD ROAD, EAST LAKE HIGH-TECH DEVELOPMENT ZONE, WUHAN, HUBEI, 430000, CHINA
Covered Property
(1)
Semiconductor Devices Including a Plurality of Fins with Corresponding Gate Oxide Layers, Fabrication Methods Thereof, 3D Memories and Memory Devices
Application:
18/323,957 →
Publication:
US 2024/0292625