Patent Assignment
Reel/Frame 066258/0298
Assignment of Assignor's Interest
Recorded: 2024-01-26
Pages: 4
Assignors
LIN, CHUN-YEN
Executed: 2023-12-26
HUANG, CHING-YU
Executed: 2023-12-24
LIN, WEI-CHENG
Executed: 2023-12-24
TZENG, JIANN-TYNG
Executed: 2024-01-01
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Device Having Different First Metallization Layer and First Buried Metallization Layer Architectures and Method of Manufacturing Same
Application:
18/398,417 →
Publication:
US 2025/0218945