Patent Assignment
Reel/Frame 066659/0921
Assignment of Assignor's Interest
Recorded: 2024-03-06
Pages: 5
Assignor
SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
Executed: 2024-03-06
Assignee
JIANGXI YUHONGJIN MATERIAL TECHNOLOGY CO., LTD.
BUILDING 7,SEMICONDUCTOR SCIENCE AND TECHNOLOGY PARK,GAOXIN 5 ROAD,FUZHOU HIGH-TECH INDUSTRIAL DEVELOPMENT ZONE, JIANGXI PROVINCE, FUZHOU, CHINA
Covered Properties
(2)
Group Iii Nitride Enhancement-Mode Hemt Based on Composite Barrier Layer Structure and Manufacturing Method Thereof
Semiconductor Device and Manufacturing Method Thereof Employing an Etching Transition Layer
Related Assignments
(2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jul 7, 2020
From: SUN, QIAN; ZHOU, YU; ZHONG, YAOZONG; GAO, HONGWEI
To: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
Reel/Frame 053130/0179 →
Assignment of Assignor's Interest
Sep 23, 2020
From: SUN, QIAN; SU, SHUAI; ZHOU, YU; ZHONG, YAOZONG
To: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
Reel/Frame 053852/0066 →