Assignment of Assignor's Interest

Recorded: 2024-05-21 Pages: 19

Assignor

CHEN, YUNG-TIN

Executed: 2024-05-10

Assignee

SAMSUNG ELECTRONICS CO., LTD.

129 SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 16677, KOREA, REPUBLIC OF

Covered Properties (5)

Three-Dimensional Ferroelectric Random-Access Memory (FeRAM)

Patent: 11,515,330 →

Application: 16/558,072 →

Publication: US 2020/0357821

Three-Dimensional Ferroelectric Random-Access Memory (Feram)

Patent: 10,825,834 →

Application: 16/733,102 →

Publication: US 2020/0357822

Three-Dimensional Ferroelectric Random-Access Memory (FeRAM)

Patent: 11,462,567 →

Application: 17/039,746 →

Publication: US 2021/0020659

Three-Dimensional Ferroelectric Random-Access Memory (Feram)

Patent: 12,389,604 →

Application: 17/878,686 →

Publication: US 2023/0062718

Three-Dimensional Ferroelectric Random-Access Memory (FeRAM)

Patent: 12,232,327 →

Application: 17/984,164 →

Publication: US 2023/0147421