Patent Assignment
Reel/Frame 072003/0461
Change of Name
Recorded: 2025-07-17
Pages: 6
Assignor
HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
Executed: 2025-06-25
Assignee
SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) CO., LTD.
ROOM 608, BUILDING 1, NO. 6 LIANHUI STREE, XIXING SUB-DISTRICT, BINJIANG DISTRICT, HANGZHOU, 310051, CHINA
Covered Properties
(9)
Silicon Carbide Mosfet Device and Manufacturing Method Thereof
Trench MOSFET and manufacturing method thereof
Application:
18/801,861 →
Publication:
US 2025/0072047
Trench Gate Semiconductor Device
Application:
18/811,823 →
Publication:
US 2025/0081519
Trench Gate Semiconductor Device and Method for Manufacturing the Same
Application:
18/946,945 →
Publication:
US 2025/0176212
Trench Capacitor and Method for Manufacturing the Same
Application:
18/986,761 →
Publication:
US 2025/0220934
Trench Gate Semiconductor Device
Application:
19/033,515 →
Publication:
US 2025/0254949
Bias Circuit and the Control Method thereof
Application:
19/066,184 →
Publication:
US 2025/0284306
Overcurrent Protection Circuit Used with Charge Pump and the Control Method Thereof
Application:
19/093,289 →
Publication:
US 2025/0316973
Shielded Gate Trench Device and a Method for Fabricating the Same
Application:
19/243,021 →
Publication:
US 2026/0013209