Semiconductor device with interconnect to source/drain
A device including an SOI substrate and an isolation structure positioned at least partially in a trench that extends through a buried insulation layer and into a semiconductor bulk substrate of the SOI substrate is disclosed. The isolation structure includes a first dielectric layer positioned in a lower portion of the trench, a first material layer positioned above the first dielectric layer, the first material layer having a material different from a material of the first dielectric layer, and a second dielectric layer positioned above the first material layer, the second dielectric layer having a material different from the material of the first material layer.
1. A device, comprising:
an SOI substrate comprising a semiconductor bulk substrate, a buried insulation layer positioned on said semiconductor bulk substrate and a semiconductor layer positioned on said buried insulation layer;
a trench formed in said SOI substrate, said trench extending through said buried insulation layer and into said semiconductor bulk substrate; and
an isolation structure positioned at least partially in said trench, said isolation structure comprising:
a first dielectric layer positioned in a portion of said trench that extends into said bulk semiconductor substrate;
a first material layer positioned above said first dielectric layer, said first material layer being made of a material that is different from a material of said first dielectric layer;
a second dielectric layer positioned above said first material layer, said second dielectric layer being made of a material that is different from said material of said first material layer; and
a liner layer positioned in said trench on said bulk semiconductor substrate and on said buried insulation layer, wherein said first material layer is positioned within said liner layer,
wherein said first material layer is a spacer that comprises an opening that exposes a portion of an upper surface of said first dielectric layer.
2. The device of claim 1 , wherein said first dielectric layer comprises silicon dioxide, said first material layer comprises silicon nitride and said second dielectric layer comprises an oxide material.
3. The device of claim 1 , wherein said first dielectric layer comprises an upper surface that is substantially coplanar with an upper surface of said bulk semiconductor substrate.
4. The device of claim 1 , wherein said buried insulation layer comprises an upper surface and said first material layer comprises an upper surface, and wherein said upper surface of said first material layer is positioned at a level that is below a level of said upper surface of said buried insulation layer.
5. The device of claim 1 , wherein said second dielectric layer comprises an upper surface that is substantially coplanar with an upper surface of said semiconductor layer.
6. The device of claim 1 , further comprising a liner layer positioned in said portion of said trench that extends into said bulk semiconductor substrate, wherein said first dielectric layer is positioned within said liner layer.
7. The device of claim 1 , wherein said first material layer covers an entire upper surface of said first dielectric layer and said second dielectric layer covers an entire upper surface of said first material layer.
8. The device of claim 1 , wherein a portion of said second dielectric layer is positioned in said opening in said first material layer and said second dielectric layer contacts said upper surface of said first dielectric layer.
9. A device, comprising:
an SOI substrate comprising a semiconductor bulk substrate, a buried insulation layer positioned on said semiconductor bulk substrate and a semiconductor layer positioned on said buried insulation layer;
a trench formed in said SOI substrate, said trench extending through said buried insulation layer and into said semiconductor bulk substrate; and
an isolation structure positioned at least partially in said trench, said isolation structure comprising:
a first dielectric layer positioned in a portion of said trench that extends into said bulk semiconductor substrate, said first dielectric layer comprising a first upper surface that is substantially coplanar with an upper surface of said bulk semiconductor substrate;
a first material layer positioned above said first dielectric layer, said first material layer being made of a material that is different from a material of said first dielectric layer, said first material layer comprising an upper surface, wherein said upper surface of said first material layer is positioned at a level that is below a level of an upper surface of said buried insulation layer;
a second dielectric layer positioned above said first material layer, said second dielectric layer being made of a material that is different from said material of said first material layer; and
a liner layer positioned in said trench on said bulk semiconductor substrate and on said buried insulation layer, wherein said first material layer is positioned within said liner layer,
wherein said first material layer is a spacer that comprises an opening that exposes a portion of an upper surface of said first dielectric layer and wherein a portion of said second dielectric layer is positioned in said opening in said first material layer and said second dielectric layer contacts said upper surface of said first dielectric layer.
10. The device of claim 9 , wherein said second dielectric layer comprises an upper surface that is substantially coplanar with an upper surface of said semiconductor layer.
11. The device of claim 9 , further comprising a liner layer positioned in said portion of said trench that extends into said bulk semiconductor substrate, wherein said first dielectric layer is positioned within said liner layer.
12. The device of claim 9 , wherein said first material layer covers an entire upper surface of said first dielectric layer and said second dielectric layer covers an entire upper surface of said first material layer.