Semiconductor device with partial EMI shielding removal using laser ablation

1. A semiconductor device, comprising:

a substrate;

a first component and second component disposed over the substrate, wherein the first component includes an antenna;

a lid disposed over the substrate between the first component and second component;

an encapsulant deposited over the substrate and lid; and

a conductive layer over the encapsulant and in contact with the lid, wherein a first portion of the conductive layer is removed to expose a first portion of the encapsulant and a first portion of the substrate.

2. The semiconductor device of claim 1 , wherein the exposed first portion of the encapsulant extends over a first surface of the encapsulant and a second surface of the encapsulant.

3. The semiconductor device of claim 2 , wherein the exposed first portion of the encapsulant extends over a third surface of the encapsulant.

4. The semiconductor device of claim 1 , wherein a second portion of the conductive layer is removed to expose a second portion of the encapsulant and a second portion of the substrate, and wherein the second portion of the conductive layer is discontinuous with the first portion of the conductive layer.

5. The semiconductor device of claim 1 , further including:

a first laser disposed over a first side of the encapsulant; and

a second laser disposed over a second side of the encapsulant.

6. The semiconductor device of claim 1 , further including:

a laser disposed over the encapsulant; and

a pick and place machine holding the encapsulant and conductive layer under the laser.

7. A semiconductor device, comprising:

a substrate;

a lid disposed over the substrate;

an encapsulant deposited over the substrate and lid; and

a conductive layer over the encapsulant and in contact with the lid, wherein a first portion of the conductive layer is removed to expose a first portion of the encapsulant and a first portion of the substrate.

8. The semiconductor device of claim 7 , wherein the exposed first portion of the encapsulant extends over a first surface of the encapsulant and a second surface of the encapsulant.

9. The semiconductor device of claim 8 , wherein the exposed first portion of the encapsulant extends over a third surface of the encapsulant.

10. The semiconductor device of claim 7 , wherein a second portion of the conductive layer is removed to expose a second portion of the encapsulant and a second portion of the substrate, and wherein the second portion of the conductive layer is discontinuous with the first portion of the conductive layer.

11. The semiconductor device of claim 10 , wherein the first portion of the encapsulant extends over a first surface and second surface of the encapsulant, and the second portion of the encapsulant extends over the second surface and a third surface of the encapsulant.

12. The semiconductor device of claim 7 , further including:

a first laser disposed over a first side of the encapsulant; and

a second laser disposed over a second side of the encapsulant.

13. The semiconductor device of claim 7 , further including:

a laser disposed over the encapsulant; and

a pick and place machine holding the encapsulant and conductive layer under the laser.

14. A semiconductor device, comprising:

a semiconductor package including an encapsulant and an electromagnetic interference (EMI) shield exposed from the encapsulant; and

a conductive layer formed over the encapsulant and in contact with the EMI shield, wherein a first portion and a second portion of the conductive layer is removed.

15. The semiconductor device of claim 14 , wherein the first portion of the conductive layer being removed exposes a first portion of the encapsulant extending over a first surface of the encapsulant and a second surface of the encapsulant.

16. The semiconductor device of claim 15 , wherein the second portion of the conductive layer being removed exposes a second portion of the encapsulant extending over the second surface of the encapsulant and a third surface of the encapsulant.

17. The semiconductor device of claim 14 , wherein the second portion of the conductive layer is discontinuous with the first portion of the conductive layer.

18. The semiconductor device of claim 14 , further including:

a first laser disposed over a first side of the semiconductor package; and

a second laser disposed over a second side of the semiconductor package.

19. The semiconductor device of claim 14 , further including:

a laser disposed over the semiconductor package; and

a pick and place machine holding semiconductor package under the laser.

20. A semiconductor device, comprising:

a semiconductor package including an encapsulant and an electromagnetic interference (EMI) shield exposed from the encapsulant; and

a conductive layer formed over the encapsulant and in contact with the EMI shield, wherein a first portion of the conductive layer is removed.

21. The semiconductor device of claim 20 , wherein the first portion of the conductive layer being removed exposes a first portion of the encapsulant extending over a first surface of the encapsulant and a second surface of the encapsulant.

22. The semiconductor device of claim 21 , wherein a second portion of the conductive layer is removed to expose a second portion of the encapsulant extending over the second surface of the encapsulant and a third surface of the encapsulant.

23. The semiconductor device of claim 22 , wherein the second portion of the conductive layer is discontinuous with the first portion of the conductive layer.

24. The semiconductor device of claim 20 , further including:

a first laser disposed over a first side of the semiconductor package; and

a second laser disposed over a second side of the semiconductor package.

25. The semiconductor device of claim 20 , further including:

a laser disposed over the semiconductor package; and

a pick and place machine holding semiconductor package under the laser.