Semiconductor laser and method of manufacturing the same
View Patent ↗A semiconductor laser has an active region which includes at least a quantum well layer and upper and lower optical waveguide layers and is of In x Ga 1−x As y P 1−y (0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers are formed on opposite sides of the active region. At least one of the optical waveguide layers is not smaller than 0.25 μm in thickness, and a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer.
1. A semiconductor laser comprising an active region which includes at least a quantum well layer and upper and lower optical waveguide layers on opposite sides of the at least a quantum well layer, the quantum well layer, the upper optical waveguide layer, and the lower optical waveguide layer each being formed of In x Ga 1−x As y P 1−y (0x≦1, 0≦y≦1), and upper and lower cladding layers formed of AlGaAs on opposite sides of the active region, wherein the improvement comprises that:
said upper optical waveguide layer is not smaller than 0.25 μm in thickness, and
a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer.
2. A semiconductor laser as defined in claim 1 in which the structure where said part of the upper cladding layer on the upper optical waveguide layer which is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer forms a ridge structure.
3. A semiconductor laser as defined in claim 1 , wherein the upper and lower optical waveguide layers on opposite sides of the quantum well layer are different thicknesses.
4. A semiconductor laser as defined in claim 1 , wherein a thickness of the upper cladding layer is greater than zero, but less than or equal to 1 μm.
5. A semiconductor laser as defined in claim 4 , wherein a thickness of the upper cladding layer is greater than zero, but less than 1 μm.
6. A semiconductor laser as defined in claim 1 , wherein said at least a quantum well layer is one quantum well layer.
7. A semiconductor laser as defined in claim 1 , wherein a resonator of said semiconductor laser is formed as a stripe, boundaries of the interface between said upper cladding layer and said upper optical waveguide layer defining a stripe width of said resonator, said part of the upper cladding layer on the upper optical waveguide layer which is selectively removed defining a lateral edge of the stripe.
8. A semiconductor laser as defined in claim 7 , wherein said part of the upper cladding layer on the upper optical waveguide layer which is selectively removed is outside said stripe, said upper cladding layer forming a mesa stripe structure and said semiconductor laser being of a ridge waveguide type.
9. A semiconductor laser comprising an active region which includes at least one quantum well layer and upper and lower optical waveguide layers on opposite sides of said at least one quantum well layer, the quantum well layer, the upper optical waveguide layer, and the lower optical waveguide layer each being formed of In x Ga 1−x As y (0≦x≦1, 0≦y≦1), and upper and lower cladding layers formed of AlGaAs on opposite sides of the active region, wherein the improvement comprises that:
said upper optical waveguide layer is not smaller than 0.25 μm in thickness,
a current blocking layer interposed between portions of the upper cladding layer and the upper optical waveguide layer, said current blocking layer being on the upper optical waveguide layer, and the portions of the upper cladding layer and the upper optical waveguide layer having the current blocking layer interposed being along opposite lateral edges of said semiconductor laser, and
an interface of the upper cladding layer and the upper optical waveguide layer, said interface being adjacent to said portions of the upper cladding layer and the upper optical waveguide layer having the current blocking layer interposed.
10. A semiconductor laser as defined in claim 9 , wherein said current blocking layer is AlGaAs, having an opposite conductivity type to said upper cladding layer.
11. A semiconductor laser as defined in claim 9 , wherein the upper and lower optical waveguide layers on opposite sides of said at least one quantum well layer are different thicknesses.
12. A semiconductor laser as defined in claim 9 , wherein a thickness of the upper cladding layer is greater than zero, but less than or equal to 1 μm.
13. A semiconductor laser as defined by claim 12 , wherein a thickness of the upper cladding layer is greater than zero, but less than 1 μm.
14. A semiconductor laser as defined in claim 9 , wherein said at least one quantum well layer is one quantum well layer.
15. A semiconductor laser as defined in 9 , wherein a resonator of said semiconductor laser is formed as a stripe, boundaries of the interface between said upper cladding layer and said upper optical waveguide layer defining a stripe width of said resonator, said portions of the upper cladding layer and the upper optical waveguide layer having the current blocking layer interposed defining lateral edges of the stripe.
16. A semiconductor laser as defined in 15 , wherein said portions of the upper cladding layer and the upper optical waveguide layer having the current blocking layer interposed form a mesa stripe channel, said interface of the upper cladding layer and the upper optical waveguide layer being inside said mesa stripe channel.