Patent Assignment
Reel/Frame 028094/0493
Assignment of Assignor's Interest
Recorded: 2012-04-24
Pages: 6
Assignor
FUJIFILM CORPORATION
Executed: 2012-04-13
Assignee
NICHIA CORPORATION
491-100, OKA, KAMINAKA-CHO, ANAN-SHI, TOKUSHIMA, 774-8601, JAPAN
Covered Properties
(85)
Semiconductor Laser
Patent:
5,602,866 →
Application:
08/325,592 →
Semiconductor Light Emitting Device
Patent:
5,608,743 →
Application:
08/502,637 →
Semiconductor Laser
Patent:
5,617,437 →
Application:
08/561,465 →
Semiconductor Light Emitting Device
Patent:
5,684,824 →
Application:
08/671,554 →
Semiconductor Laser and Method of Manufacturing the Same
Patent:
5,974,067 →
Application:
08/815,083 →
Semiconductor Light Emission Device
Patent:
6,072,818 →
Application:
08/827,252 →
Semiconductor Laser
Patent:
5,995,528 →
Application:
08/827,445 →
Short Wavelength Laser
Patent:
6,014,388 →
Application:
08/841,592 →
Semiconductor Laser
Patent:
6,028,874 →
Application:
08/877,958 →
Semiconductor Laser
Patent:
6,137,815 →
Application:
08/993,178 →
Method of Making Semiconductor Laser with Inverted Mesa Shaped Ridge with Cervical Surface
Patent:
5,963,786 →
Application:
09/009,726 →
Semiconductor Laser
Patent:
6,167,071 →
Application:
09/156,596 →
Index Optical Waveguide Semiconductor Laser
Patent:
6,195,373 →
Application:
09/161,700 →
Semiconductor Laser Device
Patent:
6,127,691 →
Application:
09/199,815 →
Semiconductor Laser
Patent:
6,285,695 →
Application:
09/246,946 →
Semiconductor Laser and Method of Manufacturing the Same
Patent:
6,876,688 →
Application:
09/315,068 →
Semiconductor Light Emitting Device
Patent:
6,268,230 →
Application:
09/421,324 →
Semiconductor Laser Unit Having Optical Guide Layers with Increased Total Thickness and Employing Junction-Up Configuration
Patent:
6,665,324 →
Application:
09/514,327 →
Semiconductor Light Emitting Device and Method for Manufacturing the Same
Patent:
6,621,159 →
Application:
09/531,215 →
Stripe Type Semiconductor Light Emitting Element Having Ingan Active Layer, Combined with Optical Resonator Including Wavelength Selection Element
Patent:
6,560,264 →
Application:
09/604,433 →
High-Power Semiconductor Laser Device Having Current Confinement Structure and Index-Guided Structure
Patent:
6,400,743 →
Application:
09/634,703 →
High-Power Semiconductor Laser Device Having Index-Guided Structure with Inalgap Current Confinement Layer
Patent:
6,396,863 →
Application:
09/634,704 →
Semiconductor Laser Device Having Thickened Impurity-Doped Aluminum-Free Optical Waveguide Layers
Patent:
6,625,190 →
Application:
09/648,807 →
Semiconductor laser element having resonator surface coated with oxygen gettering layer and high thermal conductivity layer
Patent:
6,359,921 →
Application:
09/650,636 →
Laser Apparatus in Which Surface-Emitting Semiconductor Is Excited with Semiconduct Laser Element and High-Order Oscillation Modes Are Suppressed
Patent:
6,594,297 →
Application:
09/659,847 →
Semiconductor Laser
Patent:
6,487,227 →
Application:
09/690,743 →
High-Power Semiconductor Laser Device Having Current Confinement Structure and Index-Guided Structure, and Oscillating in Transverse Mode
Patent:
6,516,016 →
Application:
09/715,192 →
GaN substrate including wide low - defect region for use in semiconductor element
High-Power Semiconductor Laser Device Having Current Confinement Structure and Index-Guided Structure and Oscillating in Transverse Mode
Laser Apparatus Including Surface-Emitting Semiconductor Excited with Semiconductor Laser Element, and Directly Modulated
Semiconductor Laser Device Having Controlled Oxygen Concentration at Boundary Between Semiconductor Layers and Reflectance Control Layer Formed on End Facet
High-Output Semiconductor Laser Element, High-Output Semiconductor Laser Apparatus and Method of Manufacturing the Same
Semiconductor Laser Device Having Strain Buffer Layer Between Compressive-Strain Quantum Well Layer and Tensile-Strain Barrier Layer
Fundamental-Transverse-Mode Index-Guided Semiconductor Laser Device Having Upper Optical Waveguide Layer Thinner Than Lower Optical Waveguide Layer
High-Power Semiconductor Laser Device in Which Near-Edge Portions of Active Layer Are Removed
Semiconductor Laser Element and Semiconductor Laser
Semiconductor Laser Element
High-Power Semiconductor Laser Device Having Current Confinement Structure and Index-Guided Structure and Stably Oscillating in Single Mode
Semiconductor Laser Module Having Optical Wavelength Conversion Element and Semiconductor Laser Element Which Includes Quantum-Well Sublayers Having Different Thicknesses and/or Compositions
High-Power Semiconductor Laser Device Including Resistance Reduction Layer Which Has Intermediate Energy Gap
Semiconductor Laser and Fabricating Method of the Same
High-Power Semiconductor Laser Device in Which Near-Edge Portions of Active Layer Are Removed
Semiconductor Laser Unit Employing an Inorganic Adhesive
Semiconductor Light Emitting Device in Which Near-Edge Portion Is Filled with Doped Regrowth Layer,and Dopant to Regrowth Layer Is Diffused into Near-Edge Region of Active Layer
Semiconductor Laser Device in Which Thicknesses of Optical Guide Region and Algan Cladding Layers Satisfy Predetermined Condition
Semiconductor Laser Device with a Current Non-Injection Region Near a Resonator End Face, and Fabrication Method Thereof
Semiconductor Laser Device Which Includes Algaas Optical Waveguide Layer Being Formed Over Internal Stripe Groove and Having Controlled Refractive Index
Light-Emitting Diode
Semiconductor Laser Device in Which Compressive Strain Active Layer Is Sandwiched Between Tensile Strain Optical Waveguide Layers and Average Strain Is Limited
Ingaasp Semiconductor Laser Device in Which Near-Edge Portions Are Filled with Non-Absorbent Layer, and Lower Optical Waveguide Layer Includes Ingap Intermediate Layer
Semiconductor Laser Device Having Ingaas Compressive-Strain Active Layer, Gaasp Tensile-Strain Barrier Layers, and Ingap Optical Waveguide Layers
Light Source Apparatus Equipped with a Gan Type Semiconductor Laser, a Method of Eliminating Stray Light, and an Image Forming Apparatus
Semiconductor Laser Device Including Arrow Structure Formed Without P-as Interdiffusion and Al Oxidation
Semiconductor Laser Device
Package Base Which Allows Mounting of a Semiconductor Element and Electrode-Wiring Terminals on a Mounting Surface
Semiconductor Laser Device in Which End of Electric-to-Optical Conversion Layer Protrudes Outward from Shortest Current Path Between End Facets of Cladding Layers
Semiconductor Laser Device in Which Near-Edge Portion of Upper Cladding Layer Is Insulated for Preventing Current Injection
Substrate Including Wide Low-Defect Region for Use in Semiconductor Element
Semiconductor Laser Device Which Includes Current Confinement Structure and Trenches Formed Through Current Stopping Layer Down to Active Layer
Process for Producing Semiconductor Laser Element Including S-Arrow Structure Formed by Etching Through Mask Having Pair of Parallel Openings
Semiconductor Laser Device
Semiconductor Laser Device Containing Controlled Interface Oxygen at Both End Facets
Ingaasp or Ingaas Semiconductor Laser Element in Which Near-Edge Portion of Active Layer Is Substituted with Gaas Optical Waveguide Layer Having Greater Bandgap Than Active Layer
Semiconductor Laser Element Having Great Bandgap Difference Between Active Layer and Optical Waveguide Layers, and Including Arrow Structure Formed Without P-as Interdiffusion
Semiconductor Laser Element
Semiconductor Laser Element Having End-Facet Protection Layer Which Includes Unoxidized or Unnitrided First Sublayer Formed on End Facet and Second Sublayer Produced by Oxidizing or Nitriding the Surface of the First Sublayer
Semiconductor Laser Device Including Arrow Structure Precisely Formed to Suppress P-as Interdiffusion and Al Oxidation
Semiconductor Light Emitting Device in Which Near-Edge Portion Is Filled with Doped Regrowth Layer, and Dopant to Regrowth Layer Is Diffused into Near-Edge Region of Active Layer
Stripe Type Semiconductor Light Emitting Element Having Ingan Active Layer, Combined with Optical Resonator Including Wavelength Selection Element
Second-Harmonic Generation Device Using Semiconductor Laser Element Having Quantum-Well Active Layer in Which Resonator Length and Mirror Loss Are Arranged to Increase Width of Gain Peak
Gan Substrate Formed Under Controlled Growth Condition Over Gan Layer Having Discretely Formed Pits
Semiconductor Laser Element Including Optical Waveguide Layers Which Have Gradually Varying Bandgaps So as to Reduce Electrical Resistance at Interfaces
Semiconductor Laser Element and Semiconductor Laser
Semiconductor Laser Element Formed on Substrate Having Tilted Crystal Orientation
Semiconductor Laser Element with Optical Waveguide Layer Having Increased Thickness
Semiconductor Laser Element Having Tensile-Strained Quantum-Well Active Layer
Semiconductor Laser Element Having Ingaas Compressive-Strained Quantum-Well Active Layer
Semiconductor Laser Having Optical Guide Layer Doped for Decreasing Resistance
Semiconductor Light Emitting Element, Light Source Using the Semiconductor Light Emitting Element, and Optical Tomography Imaging Apparatus
Super Luminescent Diode and Manufacturing Method Thereof
Semiconductor Layer, Process for Forming the Same, and Semiconductor Light Emitting Device
Semiconductor Layer, Process for Forming the Same, and Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Semiconductor Light Emitting Device
Method for Predicting Lifetime of Photo-Semiconductor Device and Drive Apparatus
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.