Method for predicting lifetime of photo-semiconductor device and drive apparatus

1. A method for predicting, based on the degradation tendency of a photo-semiconductor device, the lifetime of the photo-semiconductor device that outputs light at light output values including a maximum light output value that is restricted by thermal saturation, the method comprising using one or more processors to perform the steps of:

extracting the maximum light output value of the photo-semiconductor device by measuring the characteristic of light output from the photo-semiconductor device with respect to drive current;

repeating the step of extracting the maximum light output value of the photo-semiconductor device at least once, thereby extracting a plurality of maximum light output values of the photo-semiconductor device at a plurality of extraction points in total;

calculating a degradation curve that approximates the characteristic of the maximum light output values with respect to drive time periods that have passed after initially driving the photo-semiconductor device;

calculating, based on the degradation curve, a drive time period at which the maximum light output value on the degradation curve and a drive light output value that is set in a drive apparatus of the photo-semiconductor device become the same; and

predicting that the calculated drive time period is the lifetime of the photo-semiconductor device.

2. A method for predicting the lifetime of a photo-semiconductor device, as defined in claim 1 , wherein the degradation curve is a quadratic function curve.

3. A method for predicting the lifetime of a photo-semiconductor device, as defined in claim 1 , wherein the degradation curve is calculated based on three of the plurality of maximum light output values that have been extracted at latest three extraction points.

4. A method for predicting the lifetime of a photo-semiconductor device, as defined in claim 2 , wherein the degradation curve is calculated based on three of the plurality of maximum light output values that have been extracted at latest three extraction points.

5. A method for predicting the lifetime of a photo-semiconductor device, as defined in claim 1 , wherein the photo-semiconductor device is a superluminescent diode.

6. A method for predicting the lifetime of a photo-semiconductor device, as defined in claim 2 , wherein the photo-semiconductor device is a superluminescent diode.

7. A method for predicting the lifetime of a photo-semiconductor device, as defined in claim 3 , wherein the photo-semiconductor device is a superluminescent diode.

8. A method for predicting the lifetime of a photo-semiconductor device, as defined in claim 4 , wherein the photo-semiconductor device is a superluminescent diode.

9. A drive apparatus of a photo-semiconductor device for causing the photo-semiconductor device to output light, the drive apparatus comprising:

a lifetime prediction means that predicts the lifetime of the photo-semiconductor device by using the method for predicting the lifetime of the photo-semiconductor device, as defined in claim 1 ;

a remaining amount calculation means that calculates a remaining amount of the lifetime based on the lifetime and the drive time period in which the photo-semiconductor device has been actually driven;

a remaining amount notification means that notifies the remaining amount of the lifetime;

a timer for measuring the drive time periods that have passed after initially driving the photo-semiconductor device;

a light detection means that detects light output from the photo-semiconductor device; and

a storage means that stores the light output values of the light, which include the maximum light output values, a drive current when the light is output at each of the light output values, and the drive time periods when the light is detected.

10. A drive apparatus of a photo-semiconductor device, as defined in claim 9 , further comprising:

a warning means that warns that the remaining amount has become less than or equal to a predetermined value.