Granted Patent
Utility
US 6,362,515
· Confirmation No. 5678
GaN substrate including wide low - defect region for use in semiconductor element
Inventor:
Toshiro Hayakawa
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-01-09 | TRNA |
Transmittal of New Application | 1 | View | |
| 2001-01-09 | SPEC |
Specification | 25 | View | |
| 2001-01-09 | CLM |
Claims | 8 | View | |
| 2001-01-09 | ABST |
Abstract | 1 | View | |
| 2001-01-09 | DRW |
Drawings-only black and white line drawings | 4 | View | |
| 2001-01-09 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Toshiro Hayakawa
Kaisei-machi, JAPAN
Attorneys & Agents of Record
Classification
USPC
438/496
Prosecution
- Examiner
- HOANG, QUOC DINH
- Art Unit
- 2818
- Docket No.
- Q61242
- Confirmation No.
- 5678
Foreign Priority
004940/2000
·
2000-01-13
·
JAPAN
Publication
- Pub. No.
- US20010016404A1
- Pub. Date
- 2001-08-23
Patent Term Adjustment
-109days
No related applications found.
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2007-02-15
from
HAYAKAWA, TOSHIRO
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-01-09
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Quick Facts
- Patent No.
- US 6,362,515
- App. No.
- 09/756,199
- Filed
- 2001-01-09
- Granted
- 2002-03-26
- Pub. No.
- US20010016404A1
- Examiner
- HOANG, QUOC DINH
- Art Unit
- 2818
- PTA
- -109 days
External Links