Semiconductor laser device
View Patent ↗An n-GaAs buffer layer, an n-Al z1 Ga 1−z1 As cladding layer, an n- or i-In 0.49 Ga 0.51 P waveguide layer, an i-In x3 Ga 1−x3 As 1−y3 P y3 barrier layer, a compressive strain In x1 Ga 1−x1 As 1−y1 P y1 quantum well active layer, an i-In x3 Ga 1−x3 As 1−y3 P y3 upper barrier layer, and an In 0.49 Ga 0.51 P cap layer are laminated on an n-GaAs substrate. Regions near facets of the barrier layer to the cap layer are removed, and a p- or i-type In 0.49 Ga 0.51 P upper optical waveguide layer is laminated on the cap layer to fill in the removed portions. A p-GaAs etching stop layer, an n-In 0.49 (Al z2 Ga 1−z2 ) 0.51 P current confinement layer having an opening, an n-In 0.49 Ga 0.51 P second cap layer, a p-In 0.49 Ga 0.51 P second upper optical waveguide layer 34 and a p-Al z1 Ga 1−z1 As upper cladding layer are laminated thereon, and a p-GaAs contact layer is formed inwardly except near the facets on the laminated surface, and an insulation film is formed on the regions near the facets, and a p-side electrode is provided as an uppermost layer.
1. A semiconductor laser device comprising:
a GaAs substrate of a first conductive type;
a lower cladding layer of said first conductive type, the lower cladding layer being formed on said GaAs substrate;
a lower optical waveguide layer of said first conductive type or an undoped type made of InGaP, the lower optical waveguide layer being lattice-matched with said GaAs substrate and formed on said lower cladding layer;
an active layer made of In x1 Ga 1−x1 As 1−y1 P y1 with compressive strain where 0<x1≦0.4 and 0≦y1≦0.1, the active layer being formed on said lower optical waveguide layer;
an upper first optical waveguide layer of a second conductive type or an undoped type made of InGaP, the upper first optical waveguide layer being lattice-matched with said GaAs substrate and formed on said active layer;
a current confinement layer of a first conductive type made of In 0.49 (Al z2 Ga 1−z2 ) 0.51 P, where 0.15≦z2≦1, the current confinement layer having an opening serving as a current passage and being formed on said upper first optical waveguide layer, wherein an equivalent refractive index step difference between the opening serving as the current passage and a region where the current confinement layer exists is in a range of 1.5×10 −3 to 7.0×10 −3 ;
an upper second optical waveguide layer of the second conductive type formed so as to bury said opening, the upper second optical waveguide layer being formed on said current confinement layer;
an upper cladding layer of the second conductive type, the upper cladding layer being formed on said upper second optical waveguide layer;
a GaAs contact layer of the second conductive type, the GaAs contact layer being formed on said upper cladding layer;
an electrode formed on said GaAs contact layer; and
resonator facets formed of two opposite facets,
wherein a current injection control structure that controls a current injection to said active layer is provided in the vicinity of at least one of said facets.
2. The semiconductor laser device according to claim 1 , wherein said current injection control structure is formed by providing said GaAs contact layer to extend inwardly from a position away from said one facet by 5 ∥m or more, and less than 20 μm.
3. The semiconductor laser device according to claim 1 , wherein said current injection control structure is formed by providing said GaAs contact layer to extend inwardly from a position away from said one facet by 5 μm or more, and less than 20 μm, providing said electrode having a portion on said contact layer, the portion projecting to said facet from said contact layer, and providing an insulation layer between the projected portion of said electrode and said cladding layer of the second conductive type.
4. The semiconductor laser device according to any one of claims 1 to 3 ,
wherein said active layer is laminated only inwardly from a position away from at least one of said facets by a predetermined distance, and
a layer which has a band gap larger than that of said active layer, the layer being equivalent to said upper first optical waveguide layer, is laminated on a region ranging from an end edge away from said facet of said active layer to said facet.
5. A semiconductor laser device comprising:
a GaAs substrate of a first conductive type;
a lower cladding layer of said first conductive type, the lower cladding layer being formed on said GaAs substrate;
a lower optical waveguide layer of said first conductive type or an undoped type made of InGaP, the lower optical waveguide layer being lattice-matched with said GaAs substrate and formed on said lower cladding layer;
an active layer made of In x1 Ga 1−x1 As 1−y1 P y1 with compressive strain where 0<x1≦0.4 and 0≦y1≦0.1, the active layer being formed on said lower optical waveguide layer;
an upper first optical waveguide layer of a second conductive type or an undoped type made of InGaP, the upper first optical waveguide layer being lattice-matched with said GaAs substrate and formed on said active layer;
a current confinement layer made of In 0.49 (Al z2 Ga 1−z2 ) 0.51 P of a first conductive type, where 0.15≦z2≦1, the current confinement layer having an opening serving as a current passage and being formed on said upper first optical waveguide layer, wherein an equivalent refractive index step difference between the opening serving as the current passage and a region where the current confinement layer exists is in a range of 1.5×10 −3 to 7.0×10 −3 ;
an upper second optical waveguide layer of the second conductive type formed so as to bury said opening, the upper second optical waveguide layer being formed on said current confinement layer;
an upper cladding layer of the second conductive type, the upper cladding layer being formed on said upper second optical waveguide layer;
a GaAs contact layer of the second conductive type, the GaAs contact layer being formed on said upper cladding layer;
an electrode formed on said GaAs contact layer; and
resonator facets formed of two opposite facets,
wherein said active layer is laminated only inwardly from a position away from at least one of said facets by a predetermined distance, and
a layer which has a band gap larger than that of said active layer, the layer being equivalent to said upper first optical waveguide layer, is laminated on a region ranging from an end edge of said active layer positioned away from said at least one of said facets to said at least one of said facets.
6. The semiconductor laser device according to either of claims 1 and 3 , wherein each of said cladding layers is made of any one of A 1 z1 Ga 1−z1 As where 0.57≦z1≦0.8 and In 0.49 (Ga 1−z4 )Al z4 ) 0.51 P, where 0.1≦z4≦0.5.
7. The semiconductor laser device according to either of claims 1 and 5 , wherein said upper second optical waveguide layer of the second conductive type is made of any one of InGaP and AlGaAs having a refractive index equivalent to that of said InGaP, which are lattice-matched with said GaAs substrate.
8. The semiconductor laser device according to either of claims 1 and 5 , further comprising barrier layers with a thickness of 10 nm or less made of In x3 Ga 1−x3 As 1−y3 P y3 where 0≦x3≦0.3 and 0.1≦y3≦0.6, said barrier layers being severally formed between said active layer and said lower optical waveguide layer and between said active layer and said upper first optical waveguide layer and having band gaps larger than that of said active layer.
9. The semiconductor laser device according to claim 8 , further comprising a strain compensation layer made of in x2 Ga 1−x2 As 1−y2 P y2 where 0≦x2<0.49y2 and 0≦y2≦0.5, said strain compensation layer being formed between said active layer and said barrier layer, and having tensile strain stress.
10. The semiconductor laser device according to either of claims 1 and 5 , wherein an oscillation peak wavelength is in a range from 900 to 1200 nm.
11. The semiconductor laser device according to either of claims 1 and 5 , wherein a width of said current passage is 1.5 μm or more and less than 4 μm.
12. The semiconductor laser device according to either of claims 1 and 5 , wherein a width of said current passage is 4 μm or more.