Semiconductor laser element having InGaAs compressive-strained quantum-well active layer
View Patent ↗In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure.
1. A substrate made of GaAs; a lower optical waveguide formed above a lower cladding layer that being formed above said substrate having a stripe shape with a width smaller than a width which the substrate and made of a material of a first conductive type, where at least one compressive-strain quantum-well active layer being formed above said lower optical waveguide layer and made of InGaAs, and having a stripe shape with a width smaller than said substrate width; an upper cladding layer formed above an upper optical waveguide layer being formed above compressive-strain quantum-well active layer and made of a second conductive type, and having a stripe shape with a width smaller than said substrate width; a current-blocking layer formed on both sides of compressive-strain quantum-well active layer so that the at least one compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer; and trenches being formed through said current-blocking layer and extending along a direction of a laser resonator formed in said semiconductor laser element.
2. A semiconductor laser element according to claim 1 , further comprising at least one insulation layer which covers surfaces of said trenches.
3. A semiconductor laser element according to claim 1 , further comprising,
a lower carrier-confinement layer formed between said lower optical waveguide layer and said at least one compressive-strain quantum-well active layer, and
an upper carrier-confinement layer formed between said upper optical waveguide layer and said at least one compressive-strain quantum-well active layer;
wherein each of said lower carrier-confinement layer and said upper carrier-confinement layer is made of a material which has a bandgap greater than a bandgap which each of said lower optical waveguide layer and said upper optical waveguide layer has, and smaller than a bandgap which each of said lower cladding layer and said upper cladding layer has.
4. A semiconductor laser element according to claim 1 , wherein said current-blocking layer comprises,
a first layer formed adjacent to said at least one compressive-strain quantum-well active layer, and made of (Al x Ga 1-x ) 0.5 In 0.5 P of said second conductive type, where 0≦x≦1, and
a second layer formed above said first layer, and made of (Al x Ga 1-x ) 0.5 In 0.5 P of said first conductive type, where 0≦x≦1.
5. A semiconductor laser element according to claim 1 , further comprising,
a first multilayer film formed of a dielectric material so as to cover a first end facet of said semiconductor laser element through which laser light is emitted, and realize a first reflectance Rf at the first end facet, and
a second multilayer film formed of a dielectric material so as to cover a second end facet of said semiconductor laser element opposite to said first end facet, and realize a second reflectance Rr at the second end facet,
wherein said semiconductor laser element has a resonator length Lc, and the resonator length Lc and the first and second reflectances Rf and Rr satisfy conditions,
100 μm≦ Lc≦ 350 μm, and
Rf×Rr≧ 0.45.
6. A stripe shape ridge structure being arranged on a GaAS substrate extending along a direction of a laser resonator formed in said semiconductor laser element, where a lower optical waveguide layer formed above a lower cladding layer that formed above said substrate and made of a material of said first conductive type, at least one compressive-strain quantum-well active layer being formed above said lower optical waveguide layer and made of InGaAs, an upper cladding layer being formed above an upper optical waveguide layer that formed above said compressive-strain quantum-well active layer and made of a material of a second conductive type, where the lower and upper optical waveguide and compressive quantum-well having a stripe shape with a width smaller than said ridge-structure's width, and a current-blocking layer formed on both sides of said at least one compressive-strain quantum-well active layer so that the at least one compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer.
7. A semiconductor laser element according to claim 6 , further comprising at least one insulation layer which covers side surfaces of said ridge structure.
8. A semiconductor laser element according to claim 6 , further comprising,
a lower carrier-confinement layer formed between said lower optical waveguide layer and said at least one compressive-strain quantum-well active layer, and
an upper carrier-confinement layer formed between said upper optical waveguide layer and said at least one compressive-strain quantum-well active layer;
wherein each of said lower carrier-confinement layer and said upper carrier-confinement layer is made of a material which has a bandgap greater than a bandgap which each of said lower optical waveguide layer and said upper optical waveguide layer has, and smaller than a bandgap which each of said lower cladding layer and said upper cladding layer has.
9. A semiconductor laser element according to claim 6 , wherein said current-blocking layer comprises,
a first layer formed adjacent to said at least one compressive-strain quantum-well active layer, and made of (Al x Ga 1-x ) 0.5 In 0.5 P of said second conductive type, where 0≦x≦1, and
a second layer formed above said first layer, and made of (Al x Ga 1-x ) 0.5 In 0.5 P of said first conductive type, where 0≦x≦1.
10. A semiconductor laser element according to claim 6 , further comprising,
a first multilayer film formed of a dielectric material so as to cover a first end facet of said semiconductor laser element through which laser light is emitted, and realize a first reflectance Rf at the first end facet, and
a second multilayer film formed of a dielectric material so as to cover a second end facet of said semiconductor laser element opposite to said first end facet, and realize a second reflectance Rr at the second end facet,
wherein said semiconductor laser element has a resonator length Lc, and the resonator length Lc and the first and second reflectances Rf and Rr satisfy conditions,
100 μm≦ Lc≦ 350 μm, and
Rf×Rr≧ 0.45.