IP Library › Granted Patent US 6,709,513
Granted Patent Utility
US 6,709,513 · Confirmation No. 8414

SUBSTRATE INCLUDING WIDE LOW-DEFECT REGION FOR USE IN SEMICONDUCTOR ELEMENT

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2004-01-30 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-11-19 NOA Notice of Allowance and Fees Due (PTOL-85) 4 View
2003-11-19 NOA Notice of Allowance and Fees Due (PTOL-85) 3 View
2003-11-19 892 List of references cited by examiner 1 View
2003-11-19 IIFW Issue Information including classification, examiner, name, claim, renumbering, etc. 1 View
2003-11-19 SRFW Search information including classification, databases and other search related notes 1 View
2003-11-19 FWCLM Index of Claims 1 View
2003-11-19 DRW Drawings-only black and white line drawings 13 View
2003-11-10 SRNT Examiner's search strategy and results 1 View
2002-08-29 FRPR Certified Copy of Foreign Priority Application 24 View
2002-08-29 FRPR Certified Copy of Foreign Priority Application 22 View
2002-08-29 FRPR Certified Copy of Foreign Priority Application 32 View
2002-08-29 FRPR Certified Copy of Foreign Priority Application 46 View
2002-07-03 TRNA Transmittal of New Application 2 View
2002-07-03 SPEC Specification 54 View
2002-07-03 CLM Claims 6 View
2002-07-03 ABST Abstract 1 View
2002-07-03 DRW Drawings-only black and white line drawings 13 View
2002-07-03 OATH Oath or Declaration filed 2 View
2002-07-03 WFEE Fee Worksheet (SB06) 1 View
2002-07-03 WFEE Fee Worksheet (SB06) 1 View
2002-07-03 WCLM Claims Worksheet (PTO-2022) 1 View
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Quick Facts
Patent No.
US 6,709,513
App. No.
10/188,038
Filed
2002-07-03
Granted
2004-03-23
Pub. No.
US20030006211A1
Art Unit
1765
PTA
0 days