Semiconductor laser element formed on substrate having tilted crystal orientation
View Patent ↗A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or smaller, the tilt angle of the crystal orientation of the principal face is 8 to 54.7 degrees. When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or greater, the tilt angle of the crystal orientation of the principal face is 13 to 54.7 degrees.
1. A semiconductor laser element comprising:
a substrate of GaAs having a principal plane which has a crystal orientation tilted 8 to 54.7 degrees from (100) toward (111);
at least one layer of (Al a Ga 1-a ) 0.51 In 0.49 P being formed above said principal plane of said substrate and having a total thickness of 1 micrometer or smaller, where 0≦a≦1; and
an active layer of In x Ga 1-x As 1-y P y formed above said at least one layer, where x≈0.49y and 0<y<1,
wherein said semiconductor laser element has an oscillation wavelength equal to or greater than 760 nm and smaller than 840 nm.
2. A semiconductor laser element comprising:
a substrate of GaAs having a principal plane which has a crystal orientation tilted 8 to 54.7 degrees from (100) toward (111);
at least one layer of (Al a Ga 1-a ) 0.51 In 0.49 P being formed above said principal plane of said substrate and having a total thickness of 1 micrometer or smaller, where 0≦a≦1;
an active layer of In x Ga 1-x As 1-y P y formed above said at least one layer, where x≈0.49y and 0<y<1; and
a cladding layer of Al b Ga 1-b As, where 0.57≦b≦0.8, and one of said at least one layer is an optical waveguide layer of Ga 0.51 In 0.49 P.
3. A semiconductor laser element comprising:
a substrate of GaAs having a principal plane which has a crystal orientation tilted 13 to 54.7 degrees from (100) toward (111);
at least one layer of (Al a Ga 1-a ) 0.51 In 0.49 P being formed above said principal plane of said substrate and having a total thickness of 1 micrometer or greater, where 0≦a≦1; and
an active layer of In x Ga 1-x As 1-y P y formed above said at least one layer, where x≈0.49y and 0<y<1,
wherein said semiconductor laser element has an oscillation wavelength equal to or greater than 760 nm and smaller than 840 nm.
4. A semiconductor laser element comprising:
a substrate of GaAs having a principal plane which has a crystal orientation tilted 13 to 54.7 degrees from (100) toward (111);
at least one layer of (Al a Ga 1-a ) 0.51 In 0.49 P being formed above said principal plane of said substrate and having a total thickness of 1 micrometer or greater, where 0≦a≦1; and
an active layer of In x Ga 1-x As 1-y P y formed above said at least one layer, where x≈0.49y and 0<y<1, wherein one of said at least one layer is an optical wavelength layer of Ga 0.51 In 0.49 P, and another of said at least one layer is a cladding layer of (Al c Ga 1-c ) 0.51 In 0.49 P, and 0.3≦c≦0.7.