Granted Patent
Utility
US 6,362,515 · App. 09/756,199
GaN substrate including wide low-defect region for use in semiconductor element
Inventor:
Toshiro Hayakawa
Patented Case
View Patent ↗
Granted: Mar 26, 2002
Filed: Jan 9, 2001
Inventor
Toshiro Hayakawa
Assignee (at issue)
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.