IP Library Granted Patent US 6,888,875
Granted Patent B2
US 6,888,875 · App. 10/056,038 · Granted May 3, 2005

Light source apparatus equipped with a GaN type semiconductor laser, a method of eliminating stray light, and an image forming apparatus

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Quick Facts
Patent No.
US 6,888,875
App. No.
10/056,038
Granted
May 3, 2005
Kind
B2
Abstract

A light source apparatus equipped with a GaN type semiconductor laser, wherein deformation of the shape of the light spot due to fluctuations in the drive current of the light emitting element is prevented, is provided. A light source apparatus equipped with a GaN type semiconductor laser is provided with a slit panel or other spatial filter for eliminating stray light, which amounts to 20% or less of the total output occurring when the GaN type semiconductor laser is driven at maximum output, from the light emitted from the GaN type semiconductor laser.

Claims (84)

1. A light source apparatus equipped with a GaN type semiconductor light emitting element, comprising

a GaN type semiconductor light emitting element;

a spatial filter for eliminating stray light from the light emitted from the GaN type semiconductor light emitting element, wherein

said stray light amounts to 20% or less of the total output of the light emitted from said GaN type semiconductor light emitting element when said GaN type semiconductor light emitting element is driven at the maximum output thereof,

the GaN type semiconductor light emitting element has an active layer having stripe portions,

the stray light is randomly polarized light emitted from portions of the semiconductor light emitting element other than the stripe portions of the active layer, and

the stray light is cutoff by one of a slit panel and a pinhole panel.

2. A light source apparatus equipped with a GaN type semiconductor light emitting element as defined in claim 1 , further comprising

a focusing optical system for focusing the light emitted from the GaN type semiconductor light emitting element, wherein

the spatial filter is formed of the slit panel or the pinhole panel disposed adjacent to the convergence position of the light focused by the focusing optical system.

3. A light source apparatus equipped with a GaN type semiconductor light emitting element as defined in claim 2 , wherein a slit width of the slit panel is less than or equal to twice a spot diameter of the light at the convergence position.

4. A light source apparatus equipped with a GaN type semiconductor light emitting element as defined in claim 1 , further comprising

a focusing optical system for focusing the light emitted from the GaN type semiconductor light emitting element, wherein

the spatial filter is formed of a partially reflective mirror that partially reflects the light near the convergence position of the light focused by the focusing optical system.

5. A light source apparatus equipped with a GaN type semiconductor light emitting element as defined in claim 1 , wherein

the spatial filter is a polarization element that eliminates the light components other than the TE mode components of the light emitted from the GaN type semiconductor light emitting element.

6. A light source apparatus equipped with a GaN type semiconductor light emitting element as defined in claim 1 , wherein

the stray light is stray light that is generated when the drive current of the GaN type semiconductor light emitting element is less than the laser oscillation threshold value.

7. A device as defined in claim 6 , further comprising an image forming apparatus that scans a photosensitive material with a light modulated based on image data to form the image borne by said image data.

8. A light source apparatus equipped with a GaN type semiconductor light emitting element as defined in claim 1 , wherein

the GaN type semiconductor light emitting element has an active layer having stripe portions, further wherein

the stray light is randomly polarized light emitted from portions of the semiconductor light emitting element other than the stripe portions of the active layer.

9. A light source apparatus equipped with a GaN type semiconductor light emitting element as defined in claim 8 , wherein

the stray light includes light that leaks from the stripe portions of the active layer to portions other that the stripe portions.

10. A light source apparatus equipped with a GaN type semiconductor light emitting element as defined in claim 1 , wherein the GaN type semiconductor light emitting element is a single stripe light emitting element.

11. A light source apparatus equipped with a GaN type semiconductor light emitting element as defined in claim 1 , wherein the GaN type semiconductor light emitting element has a single emitter.

12. A method of eliminating stray light comprising the step of

emitting light from a GaN type semiconductor light emitting element;

eliminating, by use of a spatial filter, stray light from the light emitted from the light source apparatus equipped with the GaN type semiconductor light emitting element; wherein

said stray light amounts to 20% or lees of the total output of the light emitted from said GaN type semiconductor light emitting element when said GaN type semiconductor light emitting element is driven at the maximum output thereof,

the GaN type semiconductor light emitting element has an active layer having stripe portions,

the stray light is randomly polarized light emitted from portions of the semiconductor light emitting element other than the stripe portions of the active layer, and

the stray light is cutoff by one of a slit panel and a pinhole panel.

13. A method of eliminating stray light as defined in claim 12 , wherein the GaN type semiconductor light emitting element is a single stripe light emitting element.

14. A method of eliminating stray light as defined in claim 12 , wherein the GaN type semiconductor light emitting element has a single emitter.

15. A method of eliminating stray light comprising the step of

emitting light from a GaN type semiconductor light emitting element;

eliminating, by use of a spatial filter, stray light from the light emitted from the light source apparatus equipped with the GaN type semiconductor light emitting element; wherein

said stray light amounts to 20% or less of the total output of the light emitted from said GaN type semiconductor light emitting element when said GaN type semiconductor light emitting element is driven at the maximum output thereof, and

the stray light is stray light that is generated when the drive current of the GaN type semiconductor light emitting element is less than the laser oscillation threshold value.

16. A light source apparatus equipped with a GaN type semiconductor light emitting element, comprising

a GaN type semiconductor light emitting element;

a spatial filter for eliminating stray light from the light emitted from the GaN type semiconductor light emitting element, wherein

said stray light amounts to 20% or less of the total output of the light emitted from said GaN type semiconductor light emitting when said GaN type semiconductor light emitting element is driven at the maximum output thereof, further comprising

a focusing optical system for focusing the light emitted from the GaN type semiconductor light emitting element, wherein

the spatial filter is formed of a slit panel or a pinhole panel disposed adjacent to the convergence position of the light focused by the focusing optical system, and

the stray light is stray light that is generated when the drive current of the GaN type semiconductor light emitting element is less than the laser oscillation threshold value.

17. A light source apparatus equipped with a GaN type semiconductor light emitting element, comprising

a GaN type semiconductor light emitting element;

a spatial filter for eliminating stray light from the light emitted from the GaN type semiconductor light emitting element, wherein

said stray light amounts to 20% or less of the total output of the light emitted from said GaN type semiconductor light emitting element when said GaN type semiconductor light emitting element is driven at the maximum output thereof, further comprising

a focusing optical system for focusing the light emitted from the GaN type semiconductor light emitting element, wherein

the spatial filter is formed of a partially reflective mirror that partially reflects the light near the convergence position of the light focused by the focusing optical system, and

the stray light is stray light that is generated when the drive current of the GaN type semiconductor light emitting element is less than the laser oscillation threshold value.

18. A light source apparatus equipped with a GaN type semiconductor light emitting element, comprising

a GaN type semiconductor light emitting element;

a spatial filter for eliminating stray light from the light emitted from the GaN type semiconductor light emitting element, wherein

said stray light amounts to 20% or less of the total output of the light emitted from said GaN type semiconductor light emitting element when said GaN type semiconductor light emitting element is driven at the maximum output thereof,

the spatial filter is a polarization element that eliminates the light components other than the TE mode components of the light emitted from the GaN type semiconductor light emitting element, and

the stray light is stray light that is generated when the drive current of the GaN type semiconductor light emitting element is less than the laser oscillation threshold value.

19. A device as defined in any one of claims 1 to 6 and 16 to 18 , further comprising an image forming apparatus that scans a photosensitive material with a light modulated based on image data to form the image borne by said image data.

20. A method of eliminating stray light comprising the steps of

equipping a light source apparatus with a GaN type semiconductor light emitting element;

providing the light source with a spatial filter; and

eliminating, by the use of the stray filter, stray light from the emitted light, wherein

the stray light amounts to 20% or less of the total output of the light emitted from the GaN type semiconductor light emitting element when the GaN type semiconductor light emitting element is driven at the maximum output thereof,

the GaN type semiconductor light emitting element has an active layer having stripe portions,

the stray light is randomly polarized light emitted from portions of the semiconductor light emitting element other than the stripe portions of the active layer, and

the stray light is cutoff by one of a slit panel and a pinhole panel.

21. A method of eliminating stray light comprising the steps of

equipping a light source apparatus with a GaN type semiconductor light emitting element;

providing the light source with a spatial filter; and

eliminating, by use of the stray filter, stray light from the emitted light, wherein

the stray light amounts to 20% or less of the total output of the light emitted from the GaN type semiconductor light emitting element when the GaN type semiconductor light emitting element is driven at the maximum output thereof, and

the stray light is stray light that is generated when the drive current of the GaN type semiconductor light emitting element is less than the laser oscillation threshold value.

22. A light source apparatus equipped with a GaN type semiconductor light emitting element, comprising

a GaN type semiconductor light emitting element;

a spatial filter for eliminating stray light from the light emitted from the GaN type semiconductor light emitting element, wherein

said stray light amounts 20% or less of the total output of the light emitted from said GaN type semiconductor light emitting element when said GaN type semiconductor light emitting element is driven at the maximum output thereof, further comprising

a focusing optical system for focusing the light emitted from the GaN type semiconductor light emitting element, wherein

the spatial filter is formed of a slit panel or a pinhole panel disposed adjacent to the convergence position of the light focused by the focusing optical system,

the GaN type semiconductor light emitting element has an active layer having stripe portions,

the stray light is randomly polarized light emitted from portions of the semiconductor light emitting element other than the stripe portions of the active layer, and

the stray light is cutoff by the slit panel.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2012
From: FUJIFILM CORPORATION
To: NICHIA CORPORATION
Reel/Frame 028094/0493 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2007
From: FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.)
To: FUJIFILM CORPORATION
Reel/Frame 018904/0001 →