IP Library Patent Application 10254549
Patent Application Utility
App. No. 10/254,549 · Confirmation No. 9490

SEMICONDUCTOR LASER ELEMENT HAVING GREAT BANDGAP DIFFERENCE BETWEEN ACTIVE LAYER AND OPTICAL WAVEGUIDE LAYERS, AND INCLUDING ARROW STRUCTURE FORMED WITHOUT P-AS INTERDIFFUSION

Inventor: Toshiaki Fukunaga
Patent Expired Due to NonPayment of Maintenance Fees Under 37 CFR 1.362 View Patent ↗ View Publication ↗
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Code Description Pages PDF
2003-10-08 IFEE Issue Fee Payment (PTO-85B) 1 View
2002-09-26 TRNA Transmittal of New Application 1 View
2002-09-26 SPEC Specification 28 View
2002-09-26 CLM Claims 4 View
2002-09-26 ABST Abstract 1 View
2002-09-26 DRW Drawings-only black and white line drawings 6 View
2002-09-26 OATH Oath or Declaration filed 2 View
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Quick Facts
App. No.
10/254,549
Filed
2002-09-26
Granted
2003-12-09
Pub. No.
US20030063644A1
Art Unit
2828
PTA
0 days