Granted Patent
Utility
US 6,541,291
· Confirmation No. 7902
SEMICONDUCTOR LIGHT EMITTING DEVICE IN WHICH NEAR-EDGE PORTION IS FILLED WITH DOPED REGROWTH LAYER,AND DOPANT TO REGROWTH LAYER IS DIFFUSED INTO NEAR-EDGE REGION OF ACTIVE LAYER
Inventor:
Toshiaki Kuniyasu
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-08-23 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-08-23 | SPEC |
Specification | 23 | View | |
| 2001-08-23 | CLM |
Claims | 4 | View | |
| 2001-08-23 | ABST |
Abstract | 1 | View | |
| 2001-08-23 | DRW |
Drawings-only black and white line drawings | 4 | View | |
| 2001-08-23 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Toshiaki Kuniyasu
Kaisei-machi, JAPAN
Classification
USPC
257/22
Prosecution
- Examiner
- DIAZ, JOSE R
- Art Unit
- 2815
- Docket No.
- Q65936
- Confirmation No.
- 7902
Foreign Priority
253518/2000
·
2000-08-24
·
JAPAN
083185/2001
·
2001-03-22
·
JAPAN
Publication
- Pub. No.
- US20020050598A1
- Pub. Date
- 2002-05-02
Patent Term Adjustment
0days
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2007-02-15
from
KUNIYASU, TOSHIAKI
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-08-23
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Quick Facts
- Patent No.
- US 6,541,291
- App. No.
- 09/934,571
- Filed
- 2001-08-23
- Granted
- 2003-04-01
- Pub. No.
- US20020050598A1
- Examiner
- DIAZ, JOSE R
- Art Unit
- 2815
- PTA
- 0 days
External Links