IP Library Granted Patent US 6,969,302
Granted Patent B1
US 6,969,302 · App. 09/594,502 · Granted Nov 29, 2005

Semiconductor wafer grinding method

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Quick Facts
Patent No.
US 6,969,302
App. No.
09/594,502
Granted
Nov 29, 2005
Kind
B1
Abstract

To reduce the wafer production cost by grinding a sliced semiconductor wafer at a high accuracy and a high efficiency and supplying the wafer to the next polishing step. A semiconductor wafer is rough ground between grindstones by a fixed grindstone. After rough grinding, finish grinding by free abrasive grain is performed on the same grinding axis by supplying a slurry which suspends fine abrasive grain between the grindstones through slurry pipes. To perform finish grinding by free abrasive grains, a rotational speed and a feed rate of the grindstones are lowered to lower the grinding action by a fixed grindstone.

Claims (6)

1. A method for grinding semiconductor wafers comprising:

grinding a surface of a semiconductor wafer with fixed abrasive grains and without free abrasive grains;

supplying free abrasive grains to said fixed abrasive grains; and

subsequently grinding said surface of a semiconductor wafer with said fixed abrasive grains and said free abrasive grains, wherein

said fixed abrasive grains have a larger diameter than said free abrasive grains.

2. The method of claim 1 , wherein grinding includes at least one of both sides grinding of a semiconductor wafer and grinding of a chamfered portion.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 5, 2002
From: SUMITOMO METAL INDUSTRIES, LTD.
To: SUMITOMO MITSUBISHI SILICON CORPORATION
Reel/Frame 013060/0349 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2000
From: HASHII, TOMOHIRO
To: SUMITOMO METAL INDUSTRIES, LTD.
Reel/Frame 011085/0898 →