IP Library Granted Patent US 7,073,014
Granted Patent B1
US 7,073,014 · App. 09/627,682 · Granted Jul 4, 2006

Synchronous non-volatile memory system

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,073,014
App. No.
09/627,682
Granted
Jul 4, 2006
Kind
B1
Abstract

A computer system comprises a memory controller and a synchronous non-volatile memory device coupled to the memory controller via a main memory bus. The synchronous non-volatile memory device has external interconnects arranged in a manner that corresponds to interconnects of a synchronous dynamic random access memory device. The synchronous flash memory device, however, comprises a reset connection, and a Vccp power supply connection correspond to first and second no-connect (NC) interconnect pins of the synchronous dynamic random access memory. In one embodiment, the synchronous non-volatile memory device has a command interface comprising a write enable connection (WE#) to receive a write enable signal, a column address strobe connection (CAS#) to receive a column address strobe signal, a row address strobe connection (RAS#) to receive a row address strobe signal, and a chip select connection (CS#) to receive a chip select signal.

Claims (35)

1. A computer system comprising:

a memory controller;

a main memory bus coupled to the memory controller; and

a synchronous non-volatile memory device coupled to the main memory bus, wherein the synchronous non-volatile memory device has a command interface comprising:

a write enable connection (WE#) to receive a write enable signal;

a column address strobe connection (CAS#) to receive a column address strobe signal;

a row address strobe connection (RAS#) to receive a row address strobe signal; and

a chip select connection (CS#) to receive a chip select signal.

2. The computer system of claim 1 , wherein the synchronous non-volatile memory device contains a Vccp power supply connection.

3. The computer system of claim 1 , wherein the synchronous non-volatile memory device further comprises a package having a plurality of interconnect pins corresponding to the external connections.

4. The computer system of claim 3 , wherein the synchronous non-volatile memory device further comprises a plurality of interconnect pins which are physically arranged in a pattern compatible with a synchronous dynamic random access memory (SDRAM).

5. The computer system of claim 1 , wherein the synchronous non-volatile memory device further comprises a package having a plurality of conductive interconnect locations corresponding to external connections of the synchronous non-volatile memory device to the main memory bus.

6. The computer system of claim 5 , wherein the conductive interconnect locations are physically arranged in a pattern compatible with a synchronous dynamic random access memory (SDRAM).

7. The computer system of claim 6 , wherein the synchronous non-volatile memory device operates within read timing specification parameters for an SDRAM.

8. The computer system of claim 1 , wherein the synchronous non-volatile memory device is one of a synchronous flash memory device and a synchronous EEPROM memory device.

9. A computer system comprising:

a memory controller;

a main memory bus coupled to the memory controller; and

a synchronous non-volatile memory device coupled to the main memory bus, the synchronous non-volatile memory having a command interface, where the command interface comprises:

a write enable connection (WE#) to receive a write enable signal;

a column address strobe connection (CAS#) to receive a column address strobe signal; and

a row address strobe connection (RAS#) to receive a row address strobe signal.

10. The computer system of claim 9 , wherein the synchronous non-volatile memory device has conductive interconnect locations which are physically arranged in a pattern compatible with a synchronous dynamic random access memory (SDRAM).

11. The computer system of claim 9 , wherein the synchronous non-volatile memory device operates within read timing specification parameters for an SDRAM.

12. The computer system of claim 9 , wherein the synchronous non-volatile memory device is a one of a synchronous flash memory device and a synchronous EEPROM memory device.

13. The computer system of claim 9 , wherein the synchronous non-volatile memory device comprises a plurality of external connections comprising:

a plurality of bi-directional data connections;

a plurality of memory address connections;

a clock input connection;

a clock enable connection;

a plurality of memory array bank address connections;

power supply connections;

a plurality of data mask connections;

a reset connection; and

a Vccp power supply connection.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2010
From: MICRON TECHNOLOGY, INC.
To: ROUND ROCK RESEARCH, LLC
Reel/Frame 023786/0416 →