Device and method for protecting against oxidation of a conductive layer in said device
View Patent ↗In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment stuffs the surface with nitrogen, thereby preventing oxygen from being adsorbed onto the surface of the first conductive layer. In one embodiment, a second conductive layer is deposited onto the first conductive layer, and the plasma treatment lessens if not eliminates an oxide formed between the two layers as a result of subsequent thermal treatments. In another embodiment, a dielectric layer is deposited onto the first conductive layer, and the plasma treatment lessens if not eliminates the ability of the first conductive layer to incorporate oxygen from the dielectric.
1. A method of forming a semiconductor device, comprising:
providing a first conductive layer;
providing a dielectric onto said first conductive layer, wherein the dielectric comprises tantalum pentoxide;
preventing at least some oxygen from migrating from said dielectric to said first conductive layer by exposing the first conductive layer to a material selected from the group consisting of phosphine and methylsilane; and
providing a second conductive layer over the dielectric layer after exposure of the first conductive layer to the material selected from the group.
2. The method in claim 1 , wherein said method further comprises providing the second conductive layer onto said first conductive layer; and wherein said step of preventing at least some oxygen from migrating comprises preventing at least some oxygen from migrating from said first conductive layer to said second conductive layer.
3. The method of claim 1 wherein the first conductive layer comprises at least one of tungsten nitride, polysilicon, tungsten, copper, and aluminum.
4. The method of claim 3 wherein the second conductive layer comprises tungsten nitride.
5. The method of claim 4 further comprising providing a third conductive layer on the second conductive layer.
6. The method of claim 5 wherein the third conductive layer comprises copper.
7. The method of claim 1 wherein exposing the conductive material comprises exposing the conductive material to at least one material in the recited group under process conditions comprising:
a flow rate of the material of about 2 sccm to about 400 sccm;
a flow rate of about 50 sccm to about 100 sccm for an inert carrier gas;
a temperature ranging from about 150 to about 600 degrees Celsius;
a pressure ranging from about 50 millitorr to about 760 torr; and
a process time ranging from about 50 to about 500 seconds.
8. The method of claim 7 wherein the inert carrier gas comprises He or Ar.
9. A method of forming a semiconductor device, comprising:
forming a first conductive layer,
providing a dielectric onto said first conductive layer, wherein the dielectric comprises tantalum pentoxide;
inhibiting at least some oxygen from migrating from said dielectric to said first conductive layer by exposing the first conductive layer to a material selected from the group consisting of phosphine and methylsilane; and
forming a second conductive layer on the dielectric layer after exposure of the first conductive layer to the material selected from the group, wherein the second conductive layer comprises tungsten nitride.
10. The method in claim 9 , wherein said method further comprises providing the second conductive layer onto said first conductive layer; and wherein said step of inhibiting at least some oxygen from migrating comprises preventing at least some oxygen from migrating from said first conductive layer to said second conductive layer.
11. The method of claim 9 wherein the first conductive layer comprises at least one of tungsten nitride, polysilicon, tungsten, copper, and aluminum.
12. The method of claim 9 further comprising providing a third conductive layer on the second conductive layer.
13. The method of claim 12 wherein the third conductive layer comprises copper.
14. The method of claim 9 wherein exposing the conductive material comprises exposing the conductive material to at least one material in the recited group under process conditions comprising:
a flow rate of the material of about 2 sccm to about 400 sccm;
a flow rate of about 50 sccm to about 100 sccm for an inert carrier gas;
a temperature ranging from about 150 to about 600 degrees Celsius;
a pressure ranging from about 50 millitorr to about 760 torr; and
a process time ranging from about 50 to about 500 seconds.
15. The method of claim 14 wherein the inert carrier gas comprises He or Ar.
16. A method of forming a semiconductor device, comprising:
forming a first conductive layer;
providing a dielectric onto said first conductive layer, wherein the dielectric comprises tantalum pentoxide;
inhibiting at least some oxygen from migrating from said dielectric to said first conductive layer by exposing the first conductive layer to a material selected from the group consisting of phosphine and methylsilane; and
forming a second conductive layer on the dielectric layer after exposure of the first conductive layer to the material selected from the group.
17. The method of claim 16 wherein the first conductive layer comprises at least one of tungsten nitride, polysilicon, tungsten, copper, and aluminum.
18. The method of claim 16 wherein the second conductive layer comprises tungsten nitride.
19. The method of claim 18 further comprising providing a third conductive layer on the second conductive layer.
20. The method of claim 19 wherein the third conductive layer comprises copper.
21. The method of claim 16 wherein exposing the conductive material comprises exposing the conductive material to at least one material in the recited group under process conditions comprising:
a flow rate of the material of about 2 sccm to about 400 sccm;
a flow rate of about 50 sccm to about 100 sccm for an inert carrier gas;
a temperature ranging from about 150 to about 600 degrees Celsius;
a pressure ranging from about 50 millitorr to about 760 torr; and
a process time ranging from about 50 to about 500 seconds.
22. The method of claim 21 wherein the inert carrier gas comprises He or Ar.