IP Library Granted Patent US 6,924,188
Granted Patent B1
US 6,924,188 · App. 09/652,968 · Granted Aug 2, 2005

Device and method for protecting against oxidation of a conductive layer in said device

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Quick Facts
Patent No.
US 6,924,188
App. No.
09/652,968
Granted
Aug 2, 2005
Kind
B1
Abstract

In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment stuffs the surface with nitrogen, thereby preventing oxygen from being adsorbed onto the surface of the first conductive layer. In one embodiment, a second conductive layer is deposited onto the first conductive layer, and the plasma treatment lessens if not eliminates an oxide formed between the two layers as a result of subsequent thermal treatments. In another embodiment, a dielectric layer is deposited onto the first conductive layer, and the plasma treatment lessens if not eliminates the ability of the first conductive layer to incorporate oxygen from the dielectric.

Claims (12)

1. A method of passivating a multilayer conductive structure, comprising:

layering a first conductive material;

introducing the first conductive material to methylsilane;

applying electromagnetic energy to the methylsilane introduced to the first conductive material, wherein applying electromagnetic energy comprises applying ultraviolet energy at a power level ranging from approximately about 50 watts and approximately about 3000 watts; and

layering a second conductive material over the first conductive material.

2. The method in claim 1 , wherein applying electromagnetic energy to the material comprises directing ultraviolet light toward the material introduced to the first conductive material.

3. A method of passivating a multilayer conductive structure, comprising:

layering a first conductive material;

introducing the first conductive material to methylsilane;

directing ultraviolet light toward the material introduced to the first conductive material; and

layering a second conductive material over the first conductive material.

4. The method of claim 3 , wherein directing ultraviolet light further comprises applying the ultraviolet light at a power level ranging from approximately about 50 watts and approximately about 3000 watts.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 10, 2016
From: MICRON TECHNOLOGY, INC.
To: APTINA IMAGING CORPORATION
Reel/Frame 040275/0970 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2016
From: AGARWAL, VISHNU K.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 040261/0907 →