Fingerprint recognition sensor and manufacturing method thereof
A method for manufacturing a fingerprint recognition sensor is provided. The method includes providing a CMOS sensor; depositing a transparent electrode layer as a thin film on the upper portion of the CMOS image sensor, to which a terminal of an AC power source is connected, the transparent electrode layer being made of a transparent insulating material and a transparent conductive material; forming a luminescent layer at the upper portion of the transparent electrode layer to generate a light image; forming a dielectric layer at the upper portion of the luminescent layer; and forming a contamination-resistance film at the upper portion of the dielectric layer. With this method, since the CMOS image sensor is utilized, circuit construction can be simplified. In addition, a fingerprint image having a good contrast can be obtained.
1. A fingerprint recognition sensor, comprising:
a CMOS image sensor;
a transparent electrode layer formed at an upper portion of the CMOS image sensor, one terminal of an AC power source being connected with said transparent electrode layer;
a luminescent layer formed on the transparent electrode layer, said luminescent layer having fluorescent particles and a binder;
a dielectric layer formed at an upper portion of the luminescent layer; and
a contamination-resistance film formed at an upper portion of the dielectric layer, wherein a light absorbent layer is coated on the surface of the luminescent layer and diffused to thereby cover the surface of the fluorescent particles existing in the luminescent layer such that more light absorbent material is distributed at an upper surface of the fluorescent particles.
2. The fingerprint recognition sensor according to claim 1 , wherein the transparent electrode layer is directly deposited as a thin film on the CMOS image sensor.
3. A method for manufacturing a fingerprint recognition sensor, comprising:
providing a CMOS image sensor;
directly depositing a transparent electrode layer as a thin film at an upper portion of the CMOS image sensor and connecting one terminal of an AC power source to the transparent electrode layer, said transparent electrode layer being made of a transparent insulating material and a transparent conductive material;
forming a luminescent layer at an upper portion of the transparent electrode layer to generate an optical image;
forming a dielectric layer at an upper portion of the luminescent layer; and
forming a contamination-resistance film at an upper portion of the dielectric layer, wherein a light absorbent layer is coated on the surface of the luminescent layer and diffused to thereby cover the surface of the fluorescent particles existing in the luminescent layer.