Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same
View Patent ↗The invention provides a semiconductor device exhibiting a stable and high breakdown voltage, which is manufactured at a low manufacturing cost. The semiconductor device of the invention includes an n-type silicon substrate; a p-type base region in the surface portion of substrate; an n-type drain region in the surface portion of n-type substrate; a p-type offset region in the surface portion of n-type substrate; an n-type source region in the surface portion of p-type base region; a p-type contact region in the surface portion of p-type base region; a gate electrode above the extended portion of p-type base region extending between n-type source region and n-type substrate (or p-type offset region), with a gate insulation film interposed therebetween; an insulation film on gate electrode and p-type offset region; a source electrode on n-type source region; and a drain electrode on n-type drain region. The p-type offset region is formed of a first p-type sub-region, a second p-type sub-region, and a third p-type sub-region.
1. A semiconductor device exhibiting a high breakdown voltage, the semiconductor device comprising:
a semiconductor substrate of a second conductivity type;
a first region of a first conductivity type formed selectively in the surface portion of the semiconductor substrate;
a second region of the second conductivity type formed selectively in the surface portion of the semiconductor substrate;
a third region of the first conductivity type formed selectively in the surface portion of the first region;
the second region and the third region being spaced apart from each other;
a fourth region of the first conductivity type formed selectively in the surface portion of the second region;
an offset region of the second conductivity type formed selectively in the surface portion of the first region between the second region and the third region;
a first insulation film on the offset region;
a gate electrode above the extended portion of the second region extending between the fourth region and the first region with a gate insulation film interposed between the extended portion of the second region and the gate electrode;
a first main electrode on the fourth region; and
a second main electrode on the third region;
wherein the offset region comprises a plurality of sub-regions aligned between the second region and the third region, the impurity concentrations of the sub-regions being different from each other, and
wherein the offset region becomes a depletion layer when the device is turned OFF.
2. The semiconductor device according to claim 1 , wherein the depths of the sub-regions of the offset region are different from each other.
3. The semiconductor device according to claim 2 , wherein the diffusion depth of the sub-region on the side of the second region is deeper than the diffusion depth of the sub-region on the side of the third region.
4. The semiconductor device according to claim 1 , wherein the gate electrode is extended onto the first insulation film.
5. The semiconductor device according to claim 1 , wherein the impurity concentration of the sub-region on the side of the second region is higher than the impurity concentration of the sub-region on the side of the third region.
6. The semiconductor device according to claim 1 , wherein the impurity concentration of the sub-region is the concentration of an impurity of the second conductivity type.
7. The semiconductor device according to claim 1 , wherein the surface impurity concentration of the offset region of the second conductivity type is changed by adding an impurity of the first conductivity type, the amount thereof being less than the amount of the impurity of the second conductivity type in the offset region.