Patent Assignment
Reel/Frame 024252/0451
Assignment of Assignor's Interest
Recorded: 2010-04-20
Pages: 32
Assignor
FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD.
Executed: 2009-09-30
Assignee
FUJI ELECTRIC SYSTEMS CO., LTD.
11-2 OSAKI 1- CHOME, SHINAGAWA-KU, TOKYO, 141-0032, JAPAN
Covered Properties
(372)
Increased Voltage Mos Semiconductor Device
Patent:
5,089,871 →
Application:
07/547,828 →
An Overheating Detection Circuit Including a Reversely Biased Junction Having a Temperture Dependent Reverse Leakage Current for Detecting Overheating of a Power Integrated Circuit
Patent:
5,070,322 →
Application:
07/553,340 →
Conductivity Modulation Buried Gate Trench Type Mosfet
Patent:
5,032,888 →
Application:
07/555,770 →
Method of Fabricating a Bump Electrode for an Intergrated Circuit Device
Patent:
5,034,345 →
Application:
07/561,457 →
Image Position Detecting Device
Patent:
5,113,215 →
Application:
07/586,981 →
Semiconductor Device Equipped with a Conductivity Modulation Misfet
Patent:
5,155,562 →
Application:
07/654,882 →
Semiconductor Device
Patent:
5,164,877 →
Application:
07/659,995 →
Temperature-Responsive Protection Circuit for Bridge Inverter
Patent:
5,115,388 →
Application:
07/661,513 →
Semiconductor Device Having Current Detection Capability
Patent:
5,097,302 →
Application:
07/672,381 →
Mos Type Semiconductor Device with Means to Prevent Parasitic Bipolar Transister
Patent:
5,191,395 →
Application:
07/678,440 →
Conductivity Modulation Mosfet
Patent:
5,200,632 →
Application:
07/686,937 →
Semiconductor Photodiode Device with Reduced Junction Area
Patent:
5,243,215 →
Application:
07/704,052 →
Mos Semiconductor Device Having a Surge Protecting Element
Patent:
5,204,988 →
Application:
07/729,390 →
Object Detector for an Optical Instrument
Patent:
5,155,347 →
Application:
07/736,636 →
Optical Sensing Circuit Including an Integral Capacity
Patent:
5,198,660 →
Application:
07/750,638 →
Increased Voltage Mos Semiconductor Device
Patent:
5,162,883 →
Application:
07/757,676 →
Semiconductor Device
Patent:
5,155,660 →
Application:
07/760,906 →
Method of Manufacturing a Mis-Type Semiconductor
Patent:
5,164,327 →
Application:
07/772,856 →
Sealed Semiconductor Device with Protuding Portion
Patent:
5,243,217 →
Application:
07/773,219 →
Mos Device Having Reduced Gate-to-Drain Capacitance
Patent:
5,291,050 →
Application:
07/780,222 →
Method for Manufacturing a Conductivity Modulation Mosfet
Patent:
5,273,917 →
Application:
07/815,761 →
Overcurrent-Detection Circuit
Patent:
5,159,516 →
Application:
07/819,408 →
Conductivity-Modulating Mosfet
Patent:
5,221,850 →
Application:
07/819,793 →
Method for Making a Conductivity Modulation Mosfet
Patent:
5,264,378 →
Application:
07/853,044 →
Method of Dicing Semiconductor Wafer
Patent:
5,614,445 →
Application:
07/863,677 →
Insulated Gate Bipolar Transistor
Patent:
5,326,993 →
Application:
07/870,324 →
Mos Semiconductor Device Having a Main Unit Element and a Sense Unit Element for Monitoring the Current in the Main Unit Element
Patent:
5,341,003 →
Application:
07/895,742 →
Mos-Type Semiconductor Device Drive Circuit
Patent:
5,276,370 →
Application:
07/896,583 →
Semiconductor Device Equipped with a High-Voltage Misfet
Patent:
5,319,236 →
Application:
07/913,493 →
Semiconductor Device
Patent:
5,247,425 →
Application:
07/943,922 →
Semiconductor Device Having a Built-in Current-Sensing Diode
Patent:
5,306,937 →
Application:
07/945,719 →
High-Current Integrated Circuit with Wiring for Minimized On-Resistance
Patent:
5,457,348 →
Application:
07/951,679 →
Method for Making a Conductivity Modulation Mosfet
Patent:
5,270,230 →
Application:
07/952,989 →
Bump Electrode Structure and Semiconductor Chip Having the Same
Patent:
5,289,038 →
Application:
07/967,400 →
Bipolar Static Induction Transistor
Patent:
5,331,194 →
Application:
07/969,757 →
Transistor Module Having External Lead Terminal with Transient Voltage Suppression
Patent:
5,306,949 →
Application:
07/973,276 →
Reverse-Bias Control Circuit for a Voltage-Driven Switching Element
Patent:
5,287,023 →
Application:
07/973,575 →
High-Withstand-Voltage Integrated Circuit
Patent:
5,399,916 →
Application:
07/978,270 →
Insulated Gate Semiconductor Device
Patent:
5,270,566 →
Application:
07/989,958 →
Semiconductor Device Including Overvoltage Protective Circuit
Patent:
5,304,802 →
Application:
08/000,697 →
Insulated-Gate Controlled Semiconductor Device
Patent:
5,844,760 →
Application:
08/001,199 →
Insulated Gate Bipolar Transistor Having a Specific Buffer Layer Resistance
Patent:
5,360,983 →
Application:
08/046,956 →
Current-Limiting Circuit
Patent:
5,422,593 →
Application:
08/061,172 →
Method of Making a Photodiode with Reduced Junction Area
Patent:
5,338,691 →
Application:
08/065,567 →
Method for Producing Self-Aligned Ldd Cmos, Dmos with Deeper Source/ Drain and P-Base Regions and, Bipolar Devices on a Common Substrate
Patent:
5,340,756 →
Application:
08/071,016 →
Semiconductor Device
Patent:
5,500,619 →
Application:
08/121,470 →
Injection Control-Type Schottky Barrier Rectifier
Patent:
5,430,323 →
Application:
08/129,399 →
Battery Mounted Integrated Circuit Device
Patent:
5,864,182 →
Application:
08/148,271 →
Method of Producing Silicon Carbide Mosfet
Patent:
5,384,270 →
Application:
08/149,824 →
Force Sensor, Temperature Sensor and Temperature/Force Sensor Device
Patent:
5,503,034 →
Application:
08/154,025 →
Semiconductor Device with Independent Over-Current and Short-Circuit Protection
Patent:
5,396,117 →
Application:
08/156,585 →
Current Detecting Device with Temperature Compensating Device,
Patent:
5,501,517 →
Application:
08/166,995 →
Insulating Substrate for Mounting Semiconductor Devices
Patent:
5,403,651 →
Application:
08/168,407 →
Resin Sealed Semiconductor Device with Improved Structural Integrity
Patent:
5,606,200 →
Application:
08/180,481 →
Photoelectric Converting Circuit Having an Amplification Factor
Patent:
5,448,056 →
Application:
08/192,692 →
High Voltage Mis Field Effect Transistor
Patent:
5,523,599 →
Application:
08/195,453 →
Power Transistor Module Wiring Structure
Patent:
5,616,955 →
Application:
08/231,338 →
Semiconductor Device for Mounting on a Printed Wiring Board
Patent:
5,430,326 →
Application:
08/238,673 →
Insulated-Gate Semiconductor Field Effect Transistor Which Operates with a Low Gate Voltage and High Drain and Source Voltages
Patent:
5,495,122 →
Application:
08/246,250 →
Packing Box for Lead Terminal Type Semiconductor Product
Patent:
5,477,966 →
Application:
08/263,352 →
Mosfet Controled Thyristor
Patent:
5,444,273 →
Application:
08/269,621 →
Pressure Contact Semiconductor Device in a Flat Package
Patent:
5,539,220 →
Application:
08/280,618 →
Semiconductor Capacitive Acceleration Sensor
Patent:
5,665,915 →
Application:
08/281,100 →
Range Finding Device
Patent:
5,608,513 →
Application:
08/284,100 →
Method for Manfacturing Dielectrics Dividing Wafer with Isolated Regions
Patent:
5,496,760 →
Application:
08/291,991 →
Semiconductor Device
Patent:
5,521,421 →
Application:
08/294,637 →
Integrated Circuit Having a Comparator Circuit Including at Least One Differential Amplifier
Patent:
6,320,429 →
Application:
08/308,426 →
Resin-Sealed Semiconductor Device
Patent:
5,539,253 →
Application:
08/309,016 →
Semiconductor Device for Dc/Ac Converter
Patent:
5,512,782 →
Application:
08/310,314 →
Lateral Type Field Effect Transistor
Patent:
5,502,323 →
Application:
08/311,490 →
Method for Correlating Image Data of Range-Finder
Patent:
5,608,664 →
Application:
08/313,733 →
Over-Current Protection Apparatus for Transistor
Patent:
5,621,601 →
Application:
08/314,320 →
High Withstand Voltage M I S Field Effect Transistor and Semiconductor Integrated Circuit
Patent:
5,432,370 →
Application:
08/319,774 →
Insulated-Gate Bipolar Transistor
Patent:
5,530,277 →
Application:
08/321,999 →
Package for Power Semiconductor Device with Snubber Circuit
Patent:
5,543,659 →
Application:
08/327,479 →
Object-Detecting System for Optical Instrument
Patent:
5,602,944 →
Application:
08/332,443 →
Power Semiconductor Device Employing Pin Block Connection Arrangement for Facilitated and Economized Manufacture
Patent:
5,519,252 →
Application:
08/361,155 →
Semiconductor Device with Limiter Diode
Patent:
5,612,564 →
Application:
08/369,772 →
High-Withstand-Voltage Integrated Circuit for Driving a Power Semiconductor Device
Patent:
5,576,655 →
Application:
08/394,185 →
Insulated-Gate Type Bipolar Transistor
Patent:
5,557,128 →
Application:
08/397,417 →
Conductivity-Modulated-Type Mosfet
Patent:
5,532,502 →
Application:
08/397,558 →
Method for Assembling a Pressure Contact Semiconductor Device in a Flat Package
Patent:
5,635,427 →
Application:
08/428,914 →
Method of Manufacturing a Polycide Electrode
Patent:
5,618,755 →
Application:
08/437,385 →
Pressure Sensor and Temperature Sensor
Patent:
5,499,535 →
Application:
08/438,967 →
Acceleration Sensor
Patent:
5,492,011 →
Application:
08/438,973 →
Method of Manufacturing a Semiconductor Device Using Gate Side Wall as Mask for Self-Alignment
Patent:
5,739,061 →
Application:
08/439,972 →
Power Semiconductor Device Including Terminal Plates Located Between Two Substrates That Functions as Electrical Connectors and Mechanical Supports
Patent:
5,497,291 →
Application:
08/456,925 →
Manufacturing Method of Sic Schottky Diode
Patent:
5,789,311 →
Application:
08/460,619 →
Insulated-Gate Bipolar Transistor and Process of Producing the Same
Patent:
5,572,055 →
Application:
08/491,517 →
Process of Producing Insulated-Gate Bipolar Transistor
Patent:
5,624,855 →
Application:
08/491,686 →
Vertical Mos Semiconductor Device
Patent:
5,559,355 →
Application:
08/492,854 →
Control Circuit for Semiconductor Device
Patent:
5,625,312 →
Application:
08/496,243 →
Driving Circuit Module
Patent:
5,604,674 →
Application:
08/511,330 →
Constant Current Circuit
Patent:
5,587,655 →
Application:
08/514,208 →
Insulated Gate Thyristor
Patent:
5,637,888 →
Application:
08/521,517 →
Lateral Semiconductor Device and Method of Fixing Potential of the Same
Patent:
5,631,491 →
Application:
08/530,003 →
High Withstand-Voltage Lateral Mosfet with a Trench and Method of Producing the Same
Patent:
5,844,275 →
Application:
08/531,312 →
Lateral Trench Misfet
Patent:
5,701,026 →
Application:
08/547,910 →
Lateral Field Effect Transistor
Patent:
5,633,525 →
Application:
08/551,353 →
Method of Manufacturing a Power Semiconductor Device
Patent:
5,869,372 →
Application:
08/555,426 →
Semiconductor Device with Removably Fixed Lead Frame
Patent:
5,691,884 →
Application:
08/566,957 →
Semiconductor Conversion Device
Patent:
5,576,575 →
Application:
08/567,796 →
Protective Diode for Transistor
Patent:
5,561,313 →
Application:
08/567,802 →
Vertical Semiconductor Device and Method of Manufacturing the Same
Patent:
5,844,273 →
Application:
08/569,449 →
Vertical Trench Misfet and Method of Manufacturing the Same
Patent:
5,981,996 →
Application:
08/602,150 →
Back-Source Mosfet
Patent:
5,760,440 →
Application:
08/604,331 →
Insulated Gate Thyristor
Patent:
5,874,751 →
Application:
08/626,335 →
High Voltage Integrated Circuit, High Voltage Junction Terminating Structure, and High Voltage Mis Transistor
Patent:
6,124,628 →
Application:
08/631,017 →
Mos Type Semiconductor Device
Patent:
5,723,890 →
Application:
08/643,760 →
Semiconductor Apparatus
Patent:
5,710,508 →
Application:
08/648,405 →
Semiconductor Apparatus
Patent:
5,736,769 →
Application:
08/652,115 →
High Voltage Integrated Circuit, and High Voltage Level Shift Unit Used for the Same
Patent:
5,736,774 →
Application:
08/670,601 →
Lateral Semiconductor Arrangement for Power Igs
Patent:
5,801,420 →
Application:
08/684,434 →
Mos Type Semiconductor Device
Patent:
5,757,046 →
Application:
08/691,502 →
Mos Device
Patent:
5,912,491 →
Application:
08/746,987 →
Integrated Semiconductor Device
Patent:
5,828,081 →
Application:
08/759,177 →
Method for Manufacturing Mos Type Semiconductor Device
Patent:
5,721,148 →
Application:
08/759,943 →
Gate Drive Circuit Having Reduced Current Consumption and Rapid Inductive Energy Dissipation
Patent:
5,811,996 →
Application:
08/767,952 →
Flat Package Semiconductor Device
Patent:
5,874,774 →
Application:
08/768,244 →
Circuit Device for Igniting Internal Combustion Engine and Semiconductor Device for Igniting Internal Combustion Engine
Patent:
5,970,964 →
Application:
08/768,360 →
Method of Forming Silicon Carbide Trench Mosfet with a Schottky Electrode
Patent:
5,693,569 →
Application:
08/768,807 →
Semiconductor Device Manufacturing Method
Patent:
5,854,120 →
Application:
08/769,031 →
Semiconductor Device Protection Method
Patent:
5,737,200 →
Application:
08/779,156 →
Level Shift Circuit
Patent:
5,896,043 →
Application:
08/784,219 →
Semiconductor Device Having a Plurality of Parallel Drift Regions
Patent:
6,097,063 →
Application:
08/786,473 →
Lateral Semiconductor Device with Maximized Breakdown Voltage, and Methods of Fixing Potentials of Same
Patent:
5,789,782 →
Application:
08/794,146 →
Method of Manufacturing Semiconductor Device Having Low Contact Resistance
Patent:
5,972,768 →
Application:
08/803,193 →
Power Semiconductor Module
Patent:
5,896,286 →
Application:
08/804,165 →
Abnormality Detection and Protection Circuit for Semiconductor Device
Patent:
5,912,794 →
Application:
08/808,067 →
Horizontal Field Effect Transistor and Method of Manufacturing the Same
Patent:
5,981,997 →
Application:
08/821,460 →
Power Semiconductor Module
Patent:
5,942,797 →
Application:
08/824,390 →
Lateral Trench Misfet and Method of Manufacturing the Same
Patent:
5,885,878 →
Application:
08/829,751 →
Semiconductor Module with Snap Line
Patent:
5,767,576 →
Application:
08/858,452 →
Control Method for Inflating Air Bag for an Automobile
Patent:
6,027,138 →
Application:
08/879,821 →
Lateral Field Effect Transistor and Method of Manufacturing the Same
Patent:
5,917,217 →
Application:
08/926,343 →
Insulation Substrate for a Semiconductor Device
Patent:
5,869,890 →
Application:
08/938,484 →
Integrated Circuit for Driving Flat Display Device
Patent:
6,091,385 →
Application:
08/969,959 →
Power Module
Patent:
5,967,858 →
Application:
08/987,087 →
Schottky Barrier Diode Having a Guard Ring Structure
Patent:
6,177,712 →
Application:
08/987,924 →
Esd Protection Device Using Zener Diodes
Patent:
6,075,276 →
Application:
08/995,953 →
High Voltage Integrated Circuit
Patent:
5,973,366 →
Application:
08/997,903 →
Method of Manufacturing a Silicon Carbide Vertical Mosfet
Patent:
6,054,352 →
Application:
09/027,305 →
High Breakdown Voltage Mos Type Semiconductor Apparatus
Patent:
6,246,092 →
Application:
09/042,544 →
Silicon Carbide Field Effect Transistor with Increased Avalanche Withstand Capability
Patent:
5,895,939 →
Application:
09/057,631 →
Silicon Carbide Field Effect Transistor with Increased Avalance Withstand Capability
Patent:
5,963,807 →
Application:
09/057,653 →
Lateral Semiconductor Arrangement for Power Igs.
Patent:
6,066,863 →
Application:
09/064,269 →
Semiconductor Device Manufacturing Method
Patent:
6,121,097 →
Application:
09/072,903 →
Circuit for Balancing Steady-State Currents of Switching Devices in Electric Power Converter
Patent:
5,889,663 →
Application:
09/075,235 →
Semiconductor Device with Reduced Amount of Sealing Resin
Patent:
6,011,302 →
Application:
09/082,480 →
Diode and Method for Manufacturing the Same
Patent:
6,175,143 →
Application:
09/088,808 →
Method for Forming Thermal Oxide Film of Silicon Carbide Semiconductor Device
Patent:
6,265,326 →
Application:
09/109,761 →
Method for Measuring a Distance
Patent:
6,052,175 →
Application:
09/123,361 →
Method for Manufacturing Silicon Carbide Semiconductor Device
Patent:
6,096,607 →
Application:
09/135,123 →
Mos Device
Patent:
5,990,518 →
Application:
09/164,487 →
Mos Type Semiconductor Device
Patent:
5,973,359 →
Application:
09/190,929 →
Variable Frequency Soft Switching Power Supply with Reduced Noise and Improved Power Factor
Patent:
6,061,253 →
Application:
09/204,456 →
Lateral High Voltage Semiconductor Device with Protective Silicon Nitride Film in Voltage with Standing Region
Patent:
6,316,794 →
Application:
09/223,668 →
Silicon Carbide Vertical Fet and Method for Manufacturing the Same
Patent:
6,117,735 →
Application:
09/225,171 →
Switching Power Supply
Patent:
6,111,762 →
Application:
09/234,260 →
Switching Power Supply with Power Factor Control
Patent:
6,108,218 →
Application:
09/234,261 →
Mos Type Semiconductor Apparatus
Patent:
6,229,180 →
Application:
09/238,855 →
Semiconductor Sensor Chip and Method for Producing the Chip, and Semiconductor Sensor and Package for Assembling the Sensor
Patent:
6,332,359 →
Application:
09/241,096 →
Depletion Type Mos Semiconductor Device and Mos Power Ic
Patent:
6,268,628 →
Application:
09/286,900 →
Drive Circuit for Power Device
Patent:
6,215,634 →
Application:
09/289,200 →
Semiconductor Device
Patent:
6,262,474 →
Application:
09/301,716 →
Semiconductor Device
Patent:
6,181,007 →
Application:
09/324,318 →
Method for Manufacturing Silicon Carbide Mos Semiconductor Device Including Utilizing Difference in Mask Edges in Implanting
Patent:
6,238,980 →
Application:
09/343,843 →
Semiconductor Device with Alternating Conductivity Type Layer and Method of Manufacturing the Same
Patent:
6,683,347 →
Application:
09/348,915 →
Method for Manufacturing Silicon Carbide Semiconductor Device
Patent:
6,294,444 →
Application:
09/359,362 →
Method of Manufacturing Vertical Trench Misfit
Patent:
6,174,773 →
Application:
09/384,156 →
Diode and Method for Manufacturing the Same
Patent:
6,221,688 →
Application:
09/386,058 →
Silicon Carbide N Channel Mos Semiconductor Device and Method for Manufacturing the Same
Patent:
6,639,273 →
Application:
09/386,639 →
Semiconductor Device with Alternating Conductivity Type Layer and Method of Manufacturing the Same
Patent:
6,677,626 →
Application:
09/438,077 →
Semiconductor Device with Alternating Conductivity Type Layer and Method of Manufacturing the Same
Patent:
6,291,856 →
Application:
09/438,078 →
High Voltage Lateral Semiconductor Device
Patent:
6,441,432 →
Application:
09/442,023 →
Power Conversion Component with Integral Output Current Shunt and Its Manufacturing Method
Patent:
6,262,902 →
Application:
09/447,806 →
Semiconductor Device Having Low on Resistance High Speed Turn Off and Short Switching Turn Off Storage Time
Semiconductor Dynamic Quantity-Sensor and Method of Manufacturing the Same
Patent:
6,281,033 →
Application:
09/471,712 →
Semiconductor Device with Alternating Conductivity Type Layer and Method of Manufacturing the Same
Patent:
6,673,679 →
Application:
09/481,242 →
Silicon Carbide Vertical Mosfet and Method for Manufacturing the Same
Patent:
6,465,807 →
Application:
09/482,391 →
Silicon carbide vertical FET and method for manufacturing the same
Patent:
6,303,947 →
Application:
09/487,169 →
Voltage Withstanding Structure for a Semiconductor Device
Patent:
6,603,185 →
Application:
09/494,995 →
Trench-type insulated gate bipolar transistor
Patent:
6,380,586 →
Application:
09/498,928 →
Semiconductor device
Patent:
6,346,740 →
Application:
09/517,153 →
Level shift circuit
Patent:
6,326,831 →
Application:
09/517,154 →
Semiconductor Device and Method for Manufacturing the Same
Patent:
6,524,928 →
Application:
09/519,192 →
Switching Power Supply Using an Input Dc Power Supply
Patent:
6,339,262 →
Application:
09/527,359 →
Planar semiconductor device
Patent:
6,344,680 →
Application:
09/527,817 →
Level Shifter
Patent:
6,809,393 →
Application:
09/539,145 →
Semiconductor Apparatus with Alarm Predicting Meas
Patent:
6,459,380 →
Application:
09/576,383 →
Parallel-stripe type semiconductor device
Patent:
6,294,818 →
Application:
09/580,643 →
Vertical Layer Type Semiconductor Device
Patent:
6,627,948 →
Application:
09/583,016 →
Insulated Gate Transistor and the Method of Manufacturing the Same
Patent:
6,501,128 →
Application:
09/610,052 →
Schottky Barrier Diode
Patent:
6,483,164 →
Application:
09/611,634 →
Semiconductor Device
Patent:
6,396,125 →
Application:
09/624,555 →
Semiconductor Device with Alternating Conductivity Type Layer and Method of Manufacturing the Same
Patent:
6,551,909 →
Application:
09/629,711 →
Ignition semiconductor device
Patent:
6,336,448 →
Application:
09/637,994 →
High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
Patent:
6,323,539 →
Application:
09/639,738 →
Super-Junction Semiconductor Device
Patent:
6,512,268 →
Application:
09/644,157 →
Driver Circuit for Switching Device
Patent:
6,570,413 →
Application:
09/661,905 →
Semiconductor Device
Patent:
6,459,101 →
Application:
09/671,989 →
Electric Power Conversion Apparatus
Patent:
6,404,659 →
Application:
09/692,737 →
Semiconductor Device and the Method of Manufacturing the Same
Patent:
6,611,021 →
Application:
09/693,574 →
Method of Manufacturing a Super-Junction Semiconductor Device with an Alternating Conductivity Type Layer
Patent:
6,475,864 →
Application:
09/694,098 →
Semiconductor Device Having a Short Carrier Lifetime Region and Vertical Boundary Area Manufacturing Method Thereof
Patent:
6,870,199 →
Application:
09/705,648 →
Semiconductor Device and Method for Manufacturing the Same
Patent:
6,610,572 →
Application:
09/722,927 →
Power Semiconductor Rectifier Having Schottky Contact Combined with Insulation Film
Semiconductor Device Exhibiting a High Breakdown Voltage and the Method of Manufacturing the Same
Diode and Method for Manufacturing the Same
Mis Semiconductor Device with Low on Resistance and High Breakdown Voltage
High Breakdown Voltage Mos Type Semiconductor Apparatus
Depletion Type Mos Semiconductor Device and Mos Power Ic
Super-Junction Semiconductor Device
Mos Type Semiconductor Apparatus
Integrated Circuit Having a Comparator Circuit Including at Least One Differential Amplifier
Insulated Gate Semiconductor Device
Lateral Super-Junction Semiconductor Device
Semiconductor Device Having Breakdown Voltage Limiter Regions
Semiconductor Dynamic Quantity-Sensor and Method of Manufacturing the Same
Dc/Dc Converter
Dc-Dc Converter
Bidirectional Semiconductor Device and Method of Manufacturing the Same
Semiconductor Device with Alternating Conductivity Type Layer and Method of Manufacturing the Same
Pwm Control Circuit for Dc-Dc Converter
Semiconductor Apparatus and Method for Manufacturing the Same
Semiconductor Device
Semiconductor Sensor Chip and Method for Producing the Chip, and Semiconductor Sensor and Package for Assembling the Sensor
Semiconductor Sensor Chip and Method for Producing the Chip, and Semiconductor Sensor and Package for Assembling the Sensor
Semiconductor Sensor Chip and Method for Producing the Chip, and Semiconductor Sensor and Package for Assembling the Sensor
Semiconductor Sensor Chip and Method for Producing the Chip, and Semiconductor Sensor and Package for Assembling the Sensor
Semiconductor Sensor Chip and Method for Producing the Chip, and Semiconductor Sensor and Package for Assembling the Sensor
Power Supply Circuit
Level Shift Circuit
Semiconductor Device
Dc/Dc Converter and Control Method Thereof
Method of Controlling Dc / Dc Converter for Reducing Power Consumpton
A Power Semiconductor Module Ceramic Substrate with Upper and Lower Plates Attached to a Metal Base
Power Semiconductor Module
Semiconductor Physical Quantity Sensor with Improved Noise Resistance
Semiconductor Device with a Triple Well Structure and Manufacturing Method Thereof
Semiconductor Integrated Circuit Device and Manufacture Method Therefore
Diode Device and Manufacturing Method for the Same
Method of Fabricating a Semiconductor with Phosphorous and Boron Ion Implantation, and by Annealing to Control Impurity Concentration Thereof
Semiconductor Device
Semiconductor Device and Method of Manufacturing the Same
Semiconductor Integrated Circuit Device and Method of Manufacturing the Same
High Withstand Voltage Semiconductor Device
Super-Junction Semiconductor Device
Trench-Type Mosfet Having a Reduced Device Pitch and On-Resistance
Semiconductor Device
Semiconductor Device
Vertical-Type Mis Semiconductor Device
Semiconductor Device
Semiconductor Device
Layout of Semiconductor Integrated Circuit
Polysilicon Resistor Semiconductor Device
Container for Semiconductor Sensor, Manufacturing Method Therefor, and Semiconductor Sensor Device
Pressure Sensor and Pressure Sensor Housing Having a Protective Portion Adjacent to a Pressure Chamber
Semiconductor Device Having an Integral Protection Circuit
Semiconductor Device with a Protective Diode Having a High Breakdown Voltage
Semiconductor Device
Semiconductor Device
Semiconductor Device and a Method for Manufacturing Same
Semiconductor Device
Semiconductor Device
Power Semiconductor Rectifier with Ring-Shaped Trenches
Switching Power Supply Circuit
Super-Junction Semiconductor Device
Diode and Method for Manufacturing the Same
Semiconductor Integrated Circuit Device and Method of Manufacturing the Same
Semiconductor Device with an Silicon on Insulator (Soi) Substrate
High Power Semiconductor Device Having a Schottky Barrier Diode
Lateral High Breakdown Voltage Mosfet and Device Provided Therewith
Switching Power Supply
A Trench Lateral Power Mosfet and a Method of Manufacturing the Same
Semiconductor Device
Semiconductor Device and Its Manufacturing Method
Lead Frame for Resin-Molded Semiconductor Device
Semiconductor Device
Power Semiconductor Rectifier Having Broad Buffer Structure and Method of Manufacturing Thereof
Method of Manufacturing a Semiconductor Device with a Vertical Drain Drift Layer of the Alternating-Conductivity-Type
Method of Manufacturing a Semiconductor Device
Method of Manufacturing Semiconductor Device
Over-Voltage Protection Circuit
Open-Circuit Failure Detection Circuit
Semiconductor Physical Quantity Sensing Device
Semiconductor Device with Alternating Conductivity Type Layer and Method of Manufacturing the Same
Mis Semiconductor Device and the Manufacturing Method Thereof
Semiconductor device having a lateral MOSFET and combined IC using the same
Voltage with Standing Structure for a Semiconductor Device
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device and Method for Manufacturing the Same
Control Circuit of Mosfet for Synchronous Rectification
Dc-Dc Converter
Power Semiconductor Module
Semiconductor Device and a Method for Manufacturing Same
Method and Apparatus for Controlling a Dc-Dc Converter
Semiconductor Device and Method of Relaxing Thermal Stress
Method of Manufacturing Semiconductor Integrated Circuit Device
Semiconductor Device
Power Supply System & Method Thereof
Semiconductor Device with Alternating Conductivity Type Layer and Method of Manufacturing the Same
Lateral High Breakdown Voltage Mosfet and Device Provided Therewith
Power System
Reverse Blocking Semiconductor Device and a Method for Manufacturing the Same
Insulated Gate Bipolar Transistor
Lateral Super-Junction Semiconductor Device
Semiconductor Integrated Circuit Device and Manufacture Method Therefore
Trench-Type Mosfet Having a Reduced Device Pitch and On-Resistance
Current Detecting Method and Device for a Dc-Dc Converter
Method of Manufacturing a Semiconductor Integrated Circuit Device
Semiconductor Device
Method of manufacturing a semiconductor device
Application:
10/945,556 →
Publication:
US 2005/0106794
Current Detection Circuit of Bidirectional Switch
Semiconductor Device with Integrated Trench Lateral Power Mosfets and Planar Devices
Semiconductor Device Exhibiting a High Breakdown Voltage and the Method of Manufacturing the Same
Semiconductor Device with Alternating Conductivity Type Layer and Method of Manufacturing the Same
Method of Manufacturing Silicon Carbide Semiconductor Device
Semiconductor Device and Method of Manufacturing the Semiconductor Device
High Power Semiconductor Device Having a Schottky Barrier Diode
Method of Evaluating Film Thickness, Method of Detecting Polishing Terminal, and Device-Manufacturing Apparatus
Diode and Method for Manufacturing the Same
Diode and Method for Manufacturing the Same
Semiconductor System Functioning as Thyristor in on-State, and as Bipolar Transistor in Transient State or with Overcurrent
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Apparatus and Method of Manufacturing the Same
Method for Manufacturing a Semiconductor Device Having Trenches Defined in the Substrate Surface
Semiconductor Device Having a Lateral Mosfet and Combined Ic Using the Same
Insulating substrate and semiconductor device having a thermally sprayed circuit pattern
Trench Lateral Power Mosfet and a Method of Manufacturing the Same
Power Semiconductor Rectifier Having Broad Buffer Structure and Method of Manufacturing Thereof
Wiring Board
Semiconductor Superjunction Device
Semiconductor Device and Manufacturing Method Thereof
Reverse Blocking Semiconductor Device and a Method for Manufacturing the Same
Epitaxial film deposition system and epitaxial film formation method
Application:
11/398,659 →
Publication:
US 2006/0252243
Diode and Method for Manufacturing the Same
Signal Transmission Method
Semicoductor Device and Manufacturing Method Thereof
Semiconductor Device and Manufacturing Method of the Semiconductor Device
Semiconductor Device
Semiconductor Device and Method of Forming the Same
Application:
11/624,160 →
Publication:
US 2007/0187695
Semiconductor Device and Method of Forming the Same Having a Junction Termination Structure with a Beveled Sidewall
Semiconductor Device Exhibiting a High Breakdown Voltage and the Method of Manufacturing the Same
Semiconductor Device and Manufacturing Method Thereof with a Recessed Backside Substrate for Breakdown Voltage Blocking
Composite Integrated Semiconductor Device
Semiconductor Device and Method of Manufacturing the Semiconductor Device
Semiconductor Device and Manufacturing Method Thereof
Method for Manufacturing Silicon Carbide Semiconductor Device
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device Having Improved Breakdown Voltage and Method of Manufacturing the Same
Trench Mos Type Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device and the Method of Manufacturing the Same
Reverse Blocking Semiconductor Device and a Method for Manufacturing the Same
Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
Method of Manufacturing a Semiconductor Integrated Circuit Device
Method of Manufacturing a Semiconductor Integrated Circuit Device
Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device and Fabrication Method
Application:
12/032,089 →
Publication:
US 2008/0224214
Composite Integrated Semiconductor Device
Soi Trench Lateral Igbt
Semiconductor device with integrated trench lateral power MOSFETs and planar devices
Application:
12/149,016 →
Publication:
US 2008/0303087
Method of Manufacturing Silicon Carbide Semiconductor Device
Power semiconductor module
Application:
12/379,815 →
Publication:
US 2009/0166851
Semiconductor Device and Manufacturing Method of the Semiconductor Device
Trench Mos Type Silicon Carbide Semiconductor Device
Semiconductor Device and Method of Manufacturing the Semiconductor Device
Semiconductor Device and Method of Forming the Same
Method of Manufacturing a Wiring Board
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