Granted Patent
Utility
US 6,525,390 · App. 09/793,833
MIS semiconductor device with low on resistance and high breakdown voltage
Inventors:
Gen Tada, Akio Kitamura, Masaru Saito, Naoto Fujishima
Patented Case
View Patent ↗
Granted: Feb 25, 2003
Filed: Feb 27, 2001
Inventors
Gen Tada
Akio Kitamura
Masaru Saito
Naoto Fujishima
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.