Granted Patent
Utility
US 6,525,390
· Confirmation No. 7311
MIS SEMICONDUCTOR DEVICE WITH LOW ON RESISTANCE AND HIGH BREAKDOWN VOLTAGE
Inventors
Gen Tada
Nagano, JAPAN
Akio Kitamura
Nagano, JAPAN
Masaru Saito
Nagano, JAPAN
Naoto Fujishima
Nagano, JAPAN
Attorneys & Agents of Record
Classification
USPC
257/489
H10D30/65
H10D84/153
H10D64/111
H10D64/115
H10D30/603
Prosecution
- Examiner
- DICKEY, THOMAS L
- Art Unit
- 2826
- Docket No.
- FUJI:174
- Confirmation No.
- 7311
Foreign Priority
2000-146703
·
2000-05-18
·
JAPAN
Publication
- Pub. No.
- US20010048122A1
- Pub. Date
- 2001-12-06
Patent Term Adjustment
-120days
MERGER AND CHANGE OF NAME
Recorded 2011-08-26
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2010-04-20
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-04-26
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Quick Facts
- Patent No.
- US 6,525,390
- App. No.
- 09/793,833
- Filed
- 2001-02-27
- Granted
- 2003-02-25
- Pub. No.
- US20010048122A1
- Examiner
- DICKEY, THOMAS L
- Art Unit
- 2826
- PTA
- -120 days
External Links