Granted Patent
Utility
US 6,586,801
· Confirmation No. 3460
SEMICONDUCTOR DEVICE HAVING BREAKDOWN VOLTAGE LIMITER REGIONS
Inventors
Yasuhiko Onishi
Nagano, JAPAN
Tatsuhiko Fujihira
Nagano, JAPAN
Susumu Iwamoto
Nagano, JAPAN
Takahiro Sato
Nagano, JAPAN
Attorneys & Agents of Record
Classification
USPC
257/339
H10D30/66
H10D62/111
H10D62/393
Prosecution
- Examiner
- LEWIS, MONICA
- Art Unit
- 2822
- Docket No.
- FUJI:186
- Confirmation No.
- 3460
Foreign Priority
2000-132252
·
2000-05-01
·
JAPAN
Publication
- Pub. No.
- US20010052601A1
- Pub. Date
- 2001-12-20
Patent Term Adjustment
-155days
No related applications found.
MERGER AND CHANGE OF NAME
Recorded 2011-08-26
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2010-04-20
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-07-20
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Quick Facts
- Patent No.
- US 6,586,801
- App. No.
- 09/845,747
- Filed
- 2001-05-01
- Granted
- 2003-07-01
- Pub. No.
- US20010052601A1
- Examiner
- LEWIS, MONICA
- Art Unit
- 2822
- PTA
- -155 days
External Links