IP Library Granted Patent US 6,548,865
Granted Patent Utility
US 6,548,865 · Confirmation No. 1477

HIGH BREAKDOWN VOLTAGE MOS TYPE SEMICONDUCTOR APPARATUS

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Code Description Pages PDF
2001-03-05 TRNA Transmittal of New Application 3 View
2001-03-05 A.PE Preliminary Amendment 16 View
2001-03-05 SPEC Specification 29 View
2001-03-05 CLM Claims 17 View
2001-03-05 ABST Abstract 1 View
2001-03-05 DRW Drawings-only black and white line drawings 8 View
2001-03-05 OATH Oath or Declaration filed 2 View
2001-03-05 TRNA Transmittal of New Application 3 View
2001-03-05 A.PE Preliminary Amendment 16 View
2001-03-05 SPEC Specification 29 View
2001-03-05 CLM Claims 17 View
2001-03-05 ABST Abstract 1 View
2001-03-05 DRW Drawings-only black and white line drawings 8 View
2001-03-05 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,548,865
App. No.
09/799,430
Filed
2001-03-05
Granted
2003-04-15
Pub. No.
US20010009287A1
Art Unit
2826
PTA
-178 days