Granted Patent
Utility
US 6,559,023
· Confirmation No. 5259
METHOD OF FABRICATING A SEMICONDUCTOR WITH PHOSPHOROUS AND BORON ION IMPLANTATION, AND BY ANNEALING TO CONTROL IMPURITY CONCENTRATION THEREOF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2002-05-28 | TRNA |
Transmittal of New Application | 3 | View | |
| 2002-05-28 | DRW |
Drawings-only black and white line drawings | 28 | View | |
| 2002-05-28 | OATH |
Oath or Declaration filed | 2 | View | |
| 2002-02-11 | TRNA |
Transmittal of New Application | 2 | View | |
| 2002-02-11 | SPEC |
Specification | 24 | View | |
| 2002-02-11 | CLM |
Claims | 4 | View | |
| 2002-02-11 | ABST |
Abstract | 1 | View | |
| 2002-02-11 | DRW |
Drawings-only black and white line drawings | 28 | View |
Inventors
Masahito Otsuki
Nagano, JAPAN
Seiji Momota
Nagano, JAPAN
Mitsuaki Kirisawa
Nagano, JAPAN
Takashi Yoshimura
Nagano, JAPAN
Classification
USPC
438/138
H10D12/032
Prosecution
- Examiner
- OWENS, BETH E
- Art Unit
- 2824
- Docket No.
- FUJI:210
- Confirmation No.
- 5259
Foreign Priority
2001-034544
·
2001-02-09
·
JAPAN
Publication
- Pub. No.
- US20020127783A1
- Pub. Date
- 2002-09-12
Patent Term Adjustment
-120days
No related applications found.
MERGER AND CHANGE OF NAME
Recorded 2011-08-26
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2010-04-20
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2002-05-28
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Quick Facts
- Patent No.
- US 6,559,023
- App. No.
- 10/073,528
- Filed
- 2002-02-11
- Granted
- 2003-05-06
- Pub. No.
- US20020127783A1
- Examiner
- OWENS, BETH E
- Art Unit
- 2824
- PTA
- -120 days
External Links