Semiconductor device with integrated trench lateral power MOSFETs and planar devices
View Patent ↗Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.
1. A semiconductor device comprising:
at least one trench lateral power MOSFET on a semiconductor substrate, comprising
a first gate oxide film and first gate electrodes that are positioned in a trench;
a first drain region positioned under a bottom surface of the trench;
first source regions positioned on both sides of the trench;
an extended drain region positioned between the first drain region and the first source regions;
a first drain electrode connected electrically to the first drain region; and
first source electrodes connected electrically to corresponding first source regions; and
at least one planar MOSFET positioned on the semiconductor substrate, comprising
a second gate oxide film and a second gate electrode that are positioned on a surface of the semiconductor substrate;
a second drain region and a second source region that are positioned in a surface layer of the semiconductor substrate on both sides of the second gate electrode;
a second drain electrode connected electrically to the second drain region; and
a second source electrode connected electrically to the second source region,
wherein the first drain electrode, the first source electrodes, the second drain electrode, and the second source electrode are formed by patterning a same metal layer.
2. The semiconductor device according to claim 1 , wherein the first gate electrodes and the second gate electrode are formed by patterning a polysilicon layer formed on the surface of the semiconductor substrate and inside the trench.
3. The semiconductor device according to claim 1 , wherein an n-channel trench lateral power MOSFET and a p-channel trench lateral power MOSFET are positioned on the semiconductor substrate.
4. The semiconductor device according to claim 1 , wherein the at least one trench lateral power MOSFET is positioned in a well region that is positioned in the semiconductor substrate.
5. The semiconductor device according to claim 4 , wherein a plurality of trench lateral power MOSFETs of a positioned in the same well region.
6. The semiconductor device according to claim 1 , wherein an n-channel planar MOSFET and a p-channel planar MOSFET are positioned on the semiconductor substrate.
7. The semiconductor device according to claim 1 , wherein a bipolar transistor is positioned on the semiconductor substrate, and a collector electrode, a base electrode, and an emitter electrode of the bipolar transistor are formed by patterning the metal layer.
8. The semiconductor device according to claim 1 , wherein a resistance element is positioned on the semiconductor substrate, and electrodes of the resistance element are formed by patterning the metal layer.
9. The semiconductor device according to claim 2 , wherein a capacitance element is positioned on the semiconductor substrate, and an electrode of the capacitance element is formed by patterning the polysilicon layer.
10. The semiconductor device according to claim 1 , wherein the first gate oxide film is thicker than the second gate oxide film.