IP Library Granted Patent US 6,437,371
Granted Patent Utility
US 6,437,371 · Confirmation No. 8947

LAYERED DIELECTRIC ON SILICON CARBIDE SEMICONDUCTOR STRUCTURES

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Code Description Pages PDF
2001-02-12 TRNA Transmittal of New Application 2 View
2001-02-12 A.PE Preliminary Amendment 1 View
2001-02-12 SPEC Specification 19 View
2001-02-12 CLM Claims 9 View
2001-02-12 ABST Abstract 1 View
2001-02-12 DRW Drawings-only black and white line drawings 6 View
2001-02-12 OATH Oath or Declaration filed 4 View
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Quick Facts
Patent No.
US 6,437,371
App. No.
09/781,732
Filed
2001-02-12
Granted
2002-08-20
Pub. No.
US20010009788A1
Art Unit
2812
PTA
-13 days