Patent Assignment
Reel/Frame 057891/0880
Change of Name
Recorded: 2021-10-22
Pages: 11
Assignor
CREE, INC.
Executed: 2021-10-01
Assignee
WOLFSPEED, INC.
4600 SILICON DRIVE, DURHAM, NORTH CAROLINA, 27703
Covered Properties
(243)
Junction Field-Effect Transistor Formed in Silicon Carbide
Patent:
5,264,713 →
Application:
07/715,400 →
Nonvolatile Random Access Memory Device Having Transistor and Capacitor Made in Silicon Carbide Substrate
Patent:
5,465,249 →
Application:
07/798,219 →
Method of Obtaining High Quality Silicon Dioxide Passivation on Silicon Carbide and Resulting Passivated Structures
Patent:
5,459,107 →
Application:
07/893,642 →
Silicon Carbide Mosfet Having Self-Aligned Gate Structure
Patent:
5,726,463 →
Application:
07/925,823 →
Silicon Carbide Thyristor
Patent:
5,539,217 →
Application:
08/103,866 →
A Method of Making a Single Crystals Ga*N Article
Patent:
5,679,152 →
Application:
08/188,469 →
Silicon Carbide Photodiode with Improved Short Wavelength Response and Very Low Leakage Current
Patent:
5,394,005 →
Application:
08/198,679 →
Self-Aligned Field-Effect Transistor for High Frequency Applications
Patent:
5,686,737 →
Application:
08/307,173 →
Method of Obtaining High Quality Silicon Dioxide Passivation on Silicon Carbide and Resulting Passivated Structures
Patent:
5,629,531 →
Application:
08/352,887 →
Method of Obtaining High Quality Silicon Dioxide Passivation on Silicon Carbide and Resulting Passivated Structures
Patent:
5,612,260 →
Application:
08/353,456 →
Process for Reducing Defects in Oxide Layers on Silicon Carbide
Patent:
5,972,801 →
Application:
08/554,319 →
Method for Producing a Semiconductor Device by the Use of an Implanting Step
Patent:
5,674,765 →
Application:
08/636,952 →
Silicon Carbide Metal-Insulator Semiconductor Field Effect Transistor
Patent:
5,719,409 →
Application:
08/659,412 →
Method of Obtaining High Quality Silicon Dioxide Passivation on Silicon Carbide and Resulting Passivated Structures
Patent:
5,776,837 →
Application:
08/752,716 →
Silicon Carbide Metal-Insulator Semiconductor Field Effect Transistor
Patent:
5,831,288 →
Application:
08/939,710 →
Field Controlled Semiconductor Device of Sic and a Method for Production Thereof
Patent:
5,923,051 →
Application:
08/953,420 →
Gan-Based Devices Using (Ga, Al, in)N Base Layers
Patent:
6,156,581 →
Application:
08/984,473 →
Nitride Based Transistors on Semi-Insulating Silicon Carbide Substrates
Patent:
6,316,793 →
Application:
09/096,967 →
Layered Dielectric on Silicon Carbide Semiconductor Structures
Patent:
6,246,076 →
Application:
09/141,795 →
Low Defect Density (Ga, Al, in)N and Hvpe Process for Making Same
Patent:
6,440,823 →
Application:
09/179,049 →
A Lateral Field Effect Transistor of Sic, a Method for Production Thereof and a Use of Such a Transistor
Patent:
6,127,695 →
Application:
09/247,469 →
Field Effect Transistor of Sic for High Temperature Application, Use of Such a Transistor and a Method for Production Thereof
Patent:
6,278,133 →
Application:
09/298,116 →
Iii-V Nitride Substrate Boule and Method of Making and Using the Same
Patent:
6,596,079 →
Application:
09/524,062 →
Method of forming vias in silicon carbide and resulting devices and circuits
Patent:
6,475,889 →
Application:
09/546,821 →
Method for Achieving Improved Epitaxy Quality (Surface Texture and Defect Density) on Free-Standing (Aluminum, Indium, Gallium) Nitride ((Al,in,Ga)N) Substrates for Opto-Electronic and Electronic Devices
Patent:
6,447,604 →
Application:
09/605,195 →
Indium Gallium Nitride Channel High Electron Mobility Transistors, and Method of Making the Same
Patent:
6,727,531 →
Application:
09/633,598 →
Gan-Based Devices Using Thick (Ga, Al, in)N Base Layers
Patent:
6,533,874 →
Application:
09/656,595 →
Nitride Based Transistors on Semi-Insulating Silicon Carbide Substrates
Patent:
6,486,502 →
Application:
09/701,951 →
Layered Dielectric on Silicon Carbide Semiconductor Structures
Low Temperature Formation of Backside Ohmic Contacts for Vertical Devices
Patent:
6,884,644 →
Application:
09/787,189 →
Nitride Based Transistors on Semi-Insulating Silicon Carbide Substrates
High Surface Quality Gan Wafer and Method of Fabricating Same
Bulk Single Crystal Gallium Nitride and Method of Making Same
Bulk Single Crystal Gallium Nitride and Method of Making Same
Free-Standing (Al, Ga, in)N and Parting Method for Forming Same
Method of Forming Vias in Silicon Carbide and Resulting Devices and Circuits
Low Temperature Formation of Backside Ohmic Contacts for Vertical Devices
Method of Forming Vias in Silicon Carbide and Resulting Devices and Circuits
Layered Dielectric on Silicon Carbide Semiconductor Structures
Low Defect Density (Ga, Al, in) N and Hvpe Process for Making Same
Doped Group Iii-V Nitride Materials, and Microelectronic Devices and Device Precursor Structures Comprising Same
Layered Semiconductor Devices with Conductive Vias
High Surface Quality Gan Wafer and Method of Fabricating Same
Iii-V Nitride Homoepitaxial Material of Improved Quality Formed on Free-Standing (Al,in,Ga)N Substrates
Iii-V Nitride Substrate Boule and Method of Making and Using the Same
High Voltage Switching Devices and Process for Forming Same
Method and Device of Field Effect Transistor Including a Base Shorted to a Source Region
Semi-Insulating Gan and Method of Making the Same
Silicon Carbide on Diamond Substrates and Related Devices and Methods
Large Area, Uniformly Low Dislocation Density Gan Substrate and Process for Making the Same
Vicinal Gallium Nitride Substrate for High Quality Homoepitaxy
Low Temperature Formation of Backside Ohmic Contacts for Vertical Devices
Method of Forming Vias in Silicon Carbide and Resulting Devices and Circuits
Methods of Fabricating Silicon Nitride Regions in Silicon Carbide and Resulting Structures
Highly Uniform Group Iii Nitride Epitaxial Layers on 100 Millimeter Diameter Silicon Carbide Substrates
Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides
Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
Semiconductor Device Comprising a Junction Having a Plurality of Rings
Indium Gallium Nitride Channel High Electron Mobility Transistors, and Method of Making the Same
Patent:
44,538 →
Application:
11/211,122 →
Bulk Single Crystal Gallium Nitride and Method of Making Same
Distributed Functionality in a Wireless Communications Network
Patent:
7,924,927 →
Application:
11/276,959 →
Environmentally Robust Passivation Structures for High-Voltage Silicon Carbide Semiconductor Devices
Silicon Carbide Layer on Diamond Substrate for Supporting Group Iii Nitride Heterostructure Device
Vicinal Gallium Nitride Substrate for High Quality Homoepitaxy
Semiconductor Device
Reduced Leakage Power Devices by Inversion Layer Surface Passivation
Method of Forming Vias in Silicon Carbide and Resulting Devices and Circuits
Silicon Carbide Dimpled Substrate
Lateral Field Effect Transistor and Its Fabrication Comprising a Spacer Layer Above and Below the Channel Layer
Schottky Diode Structure with Silicon Mesa and Junction Barrier Schottky Wells
Graded Dielectric Layer
Silicon Carbide Self-Aligned Epitaxial Mosfet for High Powered Device Applications
Microscale Optoelectronic Device Packages
Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides
High Temperature Ion Implantation of Nitride Based Hemts
Grid-Umosfet with Electric Field Shielding of Gate Oxide
Large Area, Uniformly Low Dislocation Density Gan Substrate and Process for Making the Same
Short Gate High Power Mosfet and Method of Manufacture
Transistor with a-Face Conductive Channel and Trench Protecting Well Region
Metallization structure for high power microelectronic devices
Semiconductor Transistor with P Type Re-Grown Channel Layer
Silicon-Rich Nickel-Silicide Ohmic Contacts for Sic Semiconductor Devices
Large Area, Uniformly Low Dislocation Density Gan Substrate and Process for Making the Same
Bulk Single Crystal Gallium Nitride and Method of Making Same
Vicinal Gallium Nitride Substrate for High Quality Homoepitaxy
Highly Uniform Group Iii Nitride Epitaxial Layers on 100 Millimeter Diameter Silicon Carbide Substrates
Junction Barrier Schottky Diodes with Current Surge Capability
Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides
Silicon Carbide on Diamond Substrates and Related Devices and Methods
Method of Manufacturing Silicon Carbide Self-Aligned Epitaxial Mosfet for High Powered Device Applications
Iii-V Nitride Substrate Boule and Method of Making and Using the Same
Vicinal Gallium Nitride Substrate for High Quality Homoepitaxy
Semiconductor Devices with Heterojunction Barrier Regions and Methods of Fabricating Same
Electronic Device Structure Including a Buffer Layer on a Base Layer
Electronic Device Structure with a Semiconductor Ledge Layer for Surface Passivation
Circuit Breaker
High Voltage Switching Devices and Process for Forming Same
Contact Pad
Wafer Precursor Prepared for Group Iii Nitride Epitaxial Growth on a Composite Substrate Having Diamond and Silicon Carbide Layers, and Semiconductor Laser Formed Thereon
Low Dislocation Density Iii-V Nitride Substrate Including Filled Pits and Process for Making the Same
Semiconductor Device Having High Performance Channel
Enhanced Doherty Amplifier
Sic Devices with High Blocking Voltage Terminated by a Negative Bevel
Thin Film Resistor
Transistor with a-Face Conductive Channel and Trench Protecting Well Region
Ohmic Contact to Semiconductor Device
Ohmic Contact Structure for Group Iii Nitride Semiconductor Device Having Improved Surface Morphology and Well-Defined Edge Features
Wet Chemistry Processes for Fabricating a Semiconductor Device with Increased Channel Mobility
Semiconductor Device with Increased Channel Mobility and Dry Chemistry Processes for Fabrication Thereof
Schottky Diode
Edge Termination Structure Employing Recesses for Edge Termination Elements
Schottky Diode Employing Recesses for Elements of Junction Barrier Array
Bipolar Junction Transistor Structure for Reduced Current Crowding
Sic Devices with High Blocking Voltage Terminated by a Negative Bevel
High Voltage Switching Devices and Process for Forming Same
Bipolar Junction Transistor with Improved Avalanche Capability
High Voltage Driver
Transistor with a-Face Conductive Channel and Trench Protecting Well Region
Junction Barrier Schottky Diodes with Current Surge Capability
Power Module for Supporting High Current Densities
Using a Carbon Vacancy Reduction Material to Increase Average Carrier Lifetime in a Silicon Carbide Semiconductor Device
Hydrogen Mitigation Schemes in the Passivation of Advanced Devices
Using Stress Reduction Barrier Sub-Layers in a Semiconductor Die
Increased Transition Speed Switching Device Driver
Super Surge Diodes
Schottky Structure Employing Central Implants Between Junction Barrier Elements
Transistor Structures Having a Deep Recessed P+ Junction and Methods for Making Same
Transistor Structures Having Reduced Electrical Field at the Gate Oxide and Methods for Making Same
High Voltage Switching Devices and Process for Forming Same
Floating Bond Pad for Power Semiconductor Devices
Encapsulation of Advanced Devices Using Novel Pecvd and Ald Schemes
Wafer-Level Die Attach Metallization
Grid-Umosfet with Electric Field Shielding of Gate Oxide
High Performance Power Module
Vertical Power Transistor with Built-in Gate Buffer
Enhanced Gate Dielectric for a Field Effect Device with a Trenched Gate
Wide Bandgap Device Having a Buffer Layer Disposed Over a Diamond Substrate
Vertical Power Transistor Device
Edge Termination Technique for High Voltage Power Devices Having a Negative Feature for an Improved Edge Termination Structure
Monolithically Integrated Vertical Power Transistor and Bypass Diode
Semiconductor Device Including a Power Transistor Device and Bypass Diode
Layout Configurations for Integrating Schottky Contacts into a Power Transistor Device
Thin Film Resistor
Field Effect Device with Enhanced Gate Dielectric Structure
Semiconductor Devices in Sic Using Vias Through N-Type Substrate for Backside Contact to P-Type Layer
Schottky Diode
Stress Mitigation for Thin and Thick Films Used in Semiconductor Circuitry
Power Conversion Electronics Having Conversion and Inverter Circuitry
Converter Circuitry
Igbt Structure for Wide Band-Gap Semiconductor Materials
Application:
14/212,991 →
Publication:
US 2015/0263145
Seminconductor Device with Spreading Layer
Enhanced Doherty Amplifier
HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE
Igbt with Bidirectional Conduction
Electronic Device Structure with a Semiconductor Ledge Layer for Surface Passivation
Bias Adjustment Circuitry for Balanced Amplifiers
High Power Density, High Efficiency Power Electronic Converter
Passivation Structure for Semiconductor Devices
Semiconductor Devices with Heterojunction Barrier Regions and Methods of Fabricating Same
High Voltage Power Chip Module
Semiconductor Device with Improved Insulated Gate
Pecvd Protective Layers for Semiconductor Devices
Wafer-Level Die Attach Metallization
Hybrid Analog and Digital Power Converter Controller
Surface Mount Device with Stress Mitigation Measures
Patent:
9,450,163 →
Application:
14/721,525 →
Schottky Diode
High Voltage Power Module
High Speed, Efficient Sic Power Module
High Current, Low Switching Loss Sic Power Module
Schottky Structure Employing Central Implants Between Junction Barrier Elements
Vertical Power Transistor Device
High Speed, Efficient Sic Power Module
Transistor Structures Having Reduced Electrical Field at the Gate Oxide and Methods for Making Same
Ohmic Contact Structure for Group Iii Nitride Semiconductor Device Having Improved Surface Morphology and Well-Defined Edge Features
Vertical Fet Structure
Power Module Having a Switch Module for Supporting High Current Densities
Low Switching Loss High Performance Power Module
Power Module with Improved Reliability
Patent:
9,998,109 →
Application:
15/594,868 →
Totem Pole Pfc Converter and System
Patent:
10,224,809 →
Application:
15/725,324 →
High Voltage Power Module
Semiconductor Die with Improved Ruggedness
Vertical Semiconductor Device with Improved Ruggedness
Silicon Carbide Power Module
Vertical Power Transistor Device
Patent:
48,380 →
Application:
15/970,148 →
Power Module with Improved Reliability
Wide Bandgap Semiconductor Device
Transistor Structures Having a Deep Recessed P+ Junction and Methods for Making Same
Power Module for Supporting High Current Densities
Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage Region
Laser-Assisted Method for Parting Crystalline Material
Patent:
10,576,585 →
Application:
16/274,064 →
High Voltage Power Module
Transistor Semiconductor Die with Increased Active Area
Semiconductor Die with Improved Ruggedness
Laser-Assisted Method for Parting Crystalline Material
Patent:
10,562,130 →
Application:
16/410,487 →
Silicon Carbide Wafers with Relaxed Positive Bow and Related Methods
Patent:
10,611,052 →
Application:
16/415,721 →
Package for Power Electronics
Device Design for Short-Circuitry Protection Circuitry Within Transistors
Hybrid Power Module
Overcurrent Protection for Power Transistors
Semiconductor Device with Improved Short Circuit Withstand Time and Methods for Manufacturing the Same
Passivation Structure for Semiconductor Devices
Patent:
49,167 →
Application:
16/681,044 →
Nondestructive Characterization for Crystalline Wafers
Dislocation Distribution for Silicon Carbide Crystalline Materials
Silicon Carbide Wafers with Relaxed Positive Bow and Related Methods
High Speed, Efficient Sic Power Module
Laser-Assisted Method for Parting Crystalline Material
Patent:
11,219,966 →
Application:
16/792,261 →
Vertical Semiconductor Device with Improved Ruggedness
Alignment for Wafer Images
Semiconductor Die Having a Drift Region with a Charge Compensation Region Formed Therein Where the Charge Compensation Region Has a Plurality of Guard Rings Formed in First and Second Opposite Doping Type Portions
Application:
16/806,489 →
Publication:
US 2021/0273090
Power Semiconductor Package with Improved Performance
High Speed, Efficient Sic Power Module
Contact Structures for Semiconductor Devices
Power Devices with a Hybrid Gate Structure
Application:
16/907,163 →
Publication:
US 2021/0399128
Laser-Assisted Method for Parting Crystalline Material
High Voltage Power Module
Power Module
Vertical Semiconductor Device with Improved Ruggedness
Shielding Arrangements for Transformer Structures
Application:
16/942,082 →
Publication:
US 2022/0037080
Edge Termination Structures for Semiconductor Devices
Vertical Power Transistor Device
Patent:
49,913 →
Application:
17/080,062 →
Semiconductor Die with Improved Ruggedness
Protection Structures for Semiconductor Devices with Sensor Arrangements
Passivation Structures for Semiconductor Devices Having Patterned Structures Over Edge Termination Regions
Application:
17/088,686 →
Publication:
US 2022/0140132
Power Transistor with Soft Recovery Body Diode
Semiconductor Devices for Improved Measurements and Related Methods
Large Dimension Silicon Carbide Single Crystalline Materials with Reduced Crystallographic Stress
Large Diameter Silicon Carbide Wafers
Power Semiconductor Device with Reduced Strain
Integrated Power Module
Silicon Carbide Wafers with Relaxed Positive Bow and Related Methods
Wide Bandgap Semiconductor Device with Sensor Element
Power Transistor with Soft Recovery Body Diode
Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage Region
Power Module
Reduced Optical Absorption for Silicon Carbide Crystalline Materials
Package for Power Electronics
Power Semiconductor Die Having a Combination of Active Area and Termination Region Area Being Less Than 90% of Total Die Area
Application:
17/357,103 →
Publication:
US 2022/0416077
Arrangements of Power Semiconductor Devices for Improved Thermal Performance
Vertical Power Devices Fabricated Using Implanted Methods
Power Module
Patent:
909,310 →
Application:
29/663,502 →
Power Module
Patent:
908,632 →
Application:
29/663,505 →
Power Semiconductor Package
Patent:
937,231 →
Application:
29/730,568 →
Power Module
Patent:
1,073,632 →
Application:
29/780,368 →